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Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC035N04LSGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC035N04LSGATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 5.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.84V |
Key Features
- Equipped with OptiMOS 3 technology for optimized DC/DC converter performance.
- Features an 8-pin TDSON surface mount package suitable for compact layouts.
- Maximum drain-source resistance of 5.3 milliohms ensures low conduction losses.
- Enhancement mode channel with typical gate charge of 48 nC supports fast switching.
- Operates reliably between temperatures of -55°C to 150°C for demanding applications.
- Maximum power dissipation rating is 69 W for robust thermal handling.
- Designed as a logic-level MOSFET with forward voltage of 0.84 V to maximize efficiency.
- Complies with RoHS directive featuring Pb-free plating for environmental compliance.
Product Description
Infineon BSC035N04LSGATMA1 OptiMOS 3 N-Channel MOSFET, rated for 100 A continuous drain current and 40 V maximum drain-source voltage, is engineered for high-efficiency power conversion in compact electronic systems. Its 8-pin TDSON surface mount package enables space-saving designs and ease of integration on printed circuit boards for industrial, computing, and power management applications.
The MOSFET employs advanced OptiMOS 3 technology, delivering low on-resistance of 5.3 milliohms and excellent gate charge characteristics, which ensure efficient switching with minimal power loss. Its enhancement mode channel and logic-level gate drive make it ideal for switching regulators, DC/DC converters, and other energy-sensitive contexts.
With a maximum power dissipation of 69 W and operational temperature range from -55°C to 150°C, this component reliably withstands thermal and electrical stresses typical in industrial, laboratory, and commercial electronics. The device also features a maximum gate-source voltage rating of ±20 V and a typical forward voltage of 0.84 V, supporting robust performance in various electronic circuits.
The BSC035N04LSGATMA1 is RoHS compliant with lead-free plating and meets JEDEC qualification standards for reliability. Its compact footprint and excellent electrical parameters help designers meet stringent energy efficiency and power density requirements in next-generation electronics.
High-performance OptiMOS 3 technology for power efficiency. Low on-resistance and fast switching for optimized operation. 8-pin TDSON surface mount package for compact integration. Wide operating temperature range for industrial resilience.
RoHS-compliant, lead-free construction for environmental safety. Suitable for industrial, laboratory, HVAC, and power supply applications. Explore EnvMart’s extensive range of Infineon MOSFET components and power semiconductor solutions for advanced electronics design and manufacturing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It has a maximum drain-source voltage rating of 40 V.
The maximum drain-source resistance is 5.3 milliohms, ensuring low conduction losses.
This MOSFET comes in an 8-pin TDSON surface mount package.
The typical gate charge is 48 nC at Vgs.
It operates reliably between -55°C and 150°C.
The maximum power dissipation rating is 69 W.
The typical forward voltage is 0.84 V.
The maximum gate-source voltage rating is ±20 V.
Yes, it complies with the RoHS directive and features lead-free plating.
This model is suitable for industrial, laboratory, HVAC, and power supply applications.
The height of this model is 1.1 mm.
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