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Infineon OptiMOS N-Channel Power MOSFET 40 A, 30 V, Enhancement Mode, 8-Pin TSDSON BSZ0904NSIATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ0904NSIATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 8.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.56V |
Key Features
- Maximum continuous drain current of 40 amperes for high load capability.
- Maximum drain-source voltage rating of 30 volts suitable for medium voltage circuits.
- Low on-state resistance of 5.7 milliohms to minimize conduction losses.
- Compact 8-pin TSDSON surface mount package measuring 3.4 mm x 3.4 mm footprint.
- Maximum power dissipation rating of 37 watts to support robust operations.
- Wide operating temperature range from -55°C to 150°C for durability in harsh environments.
- Typical gate charge of 8.5 nanocoulombs allowing fast switching performance.
- Maximum gate-source voltage of ±20 V ensures reliable gate control.
Product Description
Infineon BSZ0904NSIATMA1 is a high-performance N-Channel Power MOSFET from the OptiMOS™ family, designed to meet stringent energy efficiency and power density standards in industrial and computing applications. It features an 8-pin TSDSON (Thin Small Outline Dual Flat No-Lead) surface mount package offering a compact 3.4 mm x 3.4 mm footprint and a low profile height of 1.1 mm, suitable for high density PCB layouts.
With a maximum continuous drain current of 40 A and a maximum drain-source voltage of 30 V, this device supports medium power switching requirements. The low drain-source resistance of 5.7 milliohms ensures minimized conduction losses enhancing overall system efficiency. The device can dissipate up to 37 watts of power, making it suitable for demanding power management scenarios.
The MOSFET operates reliably across a wide temperature range from -55°C up to 150°C, providing durability for automotive and industrial environments. It features a typical gate charge of 8.5 nC at the gate-source voltage threshold, facilitating fast switching speeds critical in power conversion circuits. The gate-source voltage rating of ±20 V ensures protection and operational reliability during transient conditions.
Infineon's OptiMOS technology incorporates advanced semiconductor design, delivering ultra-low on-resistance with enhanced switching capabilities, ideal for power conversion, voltage regulation, and energy-efficient electronics.
Maximum continuous drain current of 40 A supports demanding power applications. Low Rds(on) of 5.7 mΩ minimizes conduction losses. Compact and low-profile 8-pin TSDSON package with 3.4 mm x 3.4 mm dimensions. Wide operating temperature range from -55°C to 150°C ensures reliability.
Typical gate charge of 8.5 nC enables fast switching response. Maximum power dissipation of 37 W supports robust operations. Enhancement mode N-channel topology for efficient switching.
This MOSFET is suited for industrial power management, computing voltage regulators, power supplies, automotive electronics, and general electronic component applications requiring high efficiency and power density.
Explore a wide range of power semiconductors and components at EnvMart to optimize your electronic designs with the latest Infineon MOSFET technologies.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 amperes.
It has a maximum drain-source voltage rating of 30 volts, suitable for medium voltage circuits.
The low on-state resistance is 5.7 milliohms, which helps minimize conduction losses.
This MOSFET comes in an 8-pin TSDSON package with a compact footprint of 3.4 mm x 3.4 mm and a height of 1.1 mm.
The maximum power dissipation rating for this unit is 37 watts, supporting robust operations.
It operates within a wide temperature range from -55°C to 150°C, ensuring reliability in harsh environments.
The typical gate charge is 8.5 nanocoulombs, allowing for fast switching performance.
The maximum gate-source voltage for this device is ±20 V, ensuring reliable gate control.
It is suited for industrial power management, computing voltage regulators, power supplies, and automotive electronics.
This model features an enhancement mode N-channel topology, which is efficient for switching applications.
The forward voltage is 0.56 volts, relevant for its operation in circuits.
This MOSFET has a pin count of 8, which is standard for its package type.
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