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DiodesZetex NPN Bipolar Transistor 600 mA 40 V 4-Pin SOT-223 DZT2222A-13

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.8mm
Length 6.55mm
Model DZT2222A-13
Width 7.1mm
Mount Type Surface
Series DZT2222A
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • This transistor offers a maximum power dissipation of 1 watt.
  • It has a minimum DC current gain (hFE) of 35, ensuring reliable amplification.
  • The device operates within a temperature range from -55°C to 150°C.
  • The maximum transition frequency is 300 MHz for high-speed switching.
  • Maximum collector-base voltage is rated at 75 V, and emitter-base voltage at 6 V.
  • The transistor is intended for surface mount on printed circuit boards.
  • Pin count is 4, configured as a single transistor device.

Product Description

DiodesZetex DZT2222A-13 is a robust general-purpose NPN bipolar transistor designed to handle up to 600 mA collector current and withstand collector-emitter voltages up to 40 V. Packaged in a 4-pin SOT-223 surface mount package, it is optimized for efficient PCB assembly and compact form factor applications.

This transistor boasts a maximum power dissipation of 1 watt, making it suitable for moderate power switching and amplification tasks within industrial and commercial electronic circuits. It features a minimum DC current gain (hFE) of 35, providing reliable signal amplification performance.

The DZT2222A-13 is rated to operate across a broad temperature range from -55°C to 150°C, assuring stable operation in demanding environments such as industrial controls, automotive electronics, and consumer devices. Its high transition frequency of 300 MHz supports fast switching applications and high-frequency amplification.

Physical dimensions include a length of 6.55 mm, width of 7.1 mm, and height of 1.8 mm, contributing to compact PCB layout designs. The maximum collector-base voltage is rated at 75 V, while the emitter-base voltage can reach up to 6 V, offering robust electrical tolerance.

The device is a single transistor configuration with a total of 4 pins for connection. It is optimally suited for general-purpose use in electronic component assemblies requiring NPN transistor functionality in a surface mount format.

This transistor offers a maximum power dissipation of 1 watt. It has a minimum DC current gain (hFE) of 35, ensuring reliable amplification. The device operates within a temperature range from -55°C to 150°C. The maximum transition frequency is 300 MHz for high-speed switching.

The package dimensions are compact: length 6.55 mm, width 7.1 mm, height 1.8 mm. Maximum collector-base voltage is rated at 75 V, and emitter-base voltage at 6 V. The transistor is intended for surface mount on printed circuit boards.

Pin count is 4, configured as a single transistor device.

Applications include use in industrial electronics, laboratory instrumentation, communications equipment, automotive systems, manufacturing equipment, and consumer electronic devices. DiodesZetex offers reliable semiconductor components meeting the demands of modern electronic design requirements.

Explore additional DiodesZetex Bipolar Transistor products and other discrete semiconductor components within EnvMart’s catalog for comprehensive sourcing of electronic parts and materials.

DiodesZetex NPN Bipolar Transistor 600 mA 40 V 4-Pin SOT-223 DZT2222A-13
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Frequently Asked Questions

The maximum DC collector current for this transistor is 600 mA.

It has a maximum power dissipation of 1 watt.

This transistor operates within a temperature range from -55°C to 150°C.

The maximum transition frequency is 300 MHz, suitable for high-speed switching applications.

The package dimensions are 6.55 mm in length, 7.1 mm in width, and 1.8 mm in height.

It has a pin count of 4, configured as a single transistor device.

The maximum collector-emitter voltage rating is 40 V.

The maximum collector-base voltage is rated at 75 V.

The minimum DC current gain (hFE) is 35, ensuring reliable amplification.

This model is intended for surface mount on printed circuit boards.

It is suitable for use in industrial electronics, automotive systems, and consumer electronic devices.

The maximum emitter-base voltage is rated at 6 V.

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