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| Country of Origin | China |
|---|---|
| Diameter | 5.3mm |
| Brand | Vishay |
| Height | 5.3mm |
| Length | 9.5mm |
| Model | GI506-E3/54 |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-201AD |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -50°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 1.1V |
| Peak Reverse Recovery Time trr | 2μs |
| Maximum Forward Current If | 3A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V |
Vishay GI506-E3/54 is a high-efficiency silicon junction switching diode designed for standard recovery rectification applications in power electronics. It supports a maximum forward current of 3 amperes and withstands a peak reverse voltage of up to 600 volts, making it suitable for industrial, commercial, and consumer electronic circuits.
This diode features a through-hole mount type packaged in the industry-standard DO-201AD form factor, providing reliable mechanical stability and ease of PCB insertion for manufacturing processes.
With a maximum forward voltage drop of 1.1 V, the diode ensures low conduction losses. Its fast peak reverse recovery time of 2 microseconds enables quick switching capabilities in control and rectifier circuits.
Designed for harsh environments, it operates efficiently over a wide temperature range from -50°C to 150°C, ensuring durability and stable performance under thermal stress. The product has a compact design with overall dimensions of 9.5 mm length and 5.3 mm diameter, suitable for tight electronic assemblies.
The diode supports a peak non-repetitive forward surge current of 100 A, protecting circuits against transient overloads and surge conditions. Standard recovery diode for reliable rectification. 3 A steady forward current capability.
600 V maximum peak reverse voltage rating. Low forward voltage drop of 1.1 V for efficiency. Fast recovery time enhances switching performance. Durable DO-201AD through-hole package. Wide operating temperature range from -50°C to 150°C.
Compact size suitable for various electronic devices. High surge tolerance with 100 A peak current. Two-pin configuration for straightforward integration.
This silicon junction diode is ideal for use in industrial, laboratory, electronic manufacturing, power supply rectification, and other commercial and consumer electronic applications where efficient switching and reliable protection are required. It is manufactured in China under the Vishay brand, ensuring quality compliance and industry-standard reliability.
Explore similar Switching Diodes and semiconductor components in the Electronics & Electricals category on EnvMart for comprehensive sourcing needs.
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