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Vishay Silicon Junction Single 16 A 2-Pin 400 V TO-220 Diode FES16GT-E3/45
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 15.32mm |
| Length | 10.54mm |
| Model | FES16GT-E3/45 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 250A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 16A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 400V |
| Infineon Silicon Diode, Single, 7.5 A, 2-Pin 650 V TO-220 IDV15E65D2XKSA1Brand | Infineon |
Key Features
- Maximum forward current is rated at 16 Amperes.
- The diode has a maximum forward voltage drop of 1.3 Volts.
- Peak non-repetitive forward surge current is 250 Amperes.
- Peak reverse recovery time is 50 nanoseconds ensuring ultrafast switching.
- The component operates within a temperature range from -65°C to 150°C.
- It is designed for through-hole mounting in TO-220 package style.
- The diode features a 2-pin configuration suitable for power applications.
- Physical dimensions include width 4.7 mm, length 10.54 mm, and height 15.32 mm.
Product Description
Vishay FES16GT-E3/45 Silicon Junction Diode is a single diode designed for power rectification and switching applications. Rated for a maximum forward current of 16 Amperes and voltage up to 400 Volts, it features ultrafast recovery characteristics with a reverse recovery time of just 50 nanoseconds. Its maximum forward voltage drop is 1.3 Volts, contributing to efficient electrical performance in power electronics circuits.
Packaged in a TO-220 case with through-hole mount, this diode has a 2-pin configuration facilitating easy integration into circuit boards. The device is capable of handling peak non-repetitive forward surge currents up to 250 Amperes, making it suitable for transient overload conditions in industrial and commercial equipment.
The diode operates reliably over a broad temperature range from -65°C to 150°C, ensuring functionality in demanding environments such as industrial automation, consumer electronics, and power supply units.
Physical dimensions are compact with a width of 4.7 mm, length of 10.54 mm, and height of 15.32 mm, optimizing space on printed circuit boards. Manufactured in China, this Vishay diode meets quality standards suitable for robust electronic design.
Maximum forward current is rated at 16 Amperes. The diode has a maximum forward voltage drop of 1.3 Volts. Peak non-repetitive forward surge current is 250 Amperes. Peak reverse recovery time is 50 nanoseconds ensuring ultrafast switching.
The component operates within a temperature range from -65°C to 150°C. It is designed for through-hole mounting in TO-220 package style. The diode features a 2-pin configuration suitable for power applications. Physical dimensions include width 4.7 mm, length 10.54 mm, and height 15.32 mm.
Manufactured in China under Vishay Semiconductor standards. This diode is ideally suited for industrial, electronic manufacturing, and power electronics circuits where reliable fast switching and high current handling are required.
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Frequently Asked Questions
The maximum forward current rating of this diode is 16 Amperes.
The peak reverse recovery time for this model is 50 nanoseconds, enabling ultrafast switching.
The maximum peak reverse repetitive voltage this diode can handle is 400 Volts.
The physical dimensions of this diode are width 4.7 mm, length 10.54 mm, and height 15.32 mm.
The peak non-repetitive forward surge current rating is 250 Amperes.
This diode operates within a temperature range from -65°C to 150°C.
The diode is designed for through-hole mounting in a TO-220 package style.
This diode features a 2-pin configuration suitable for power applications.
The maximum forward voltage drop is rated at 1.3 Volts.
This diode is manufactured in China.
This model is classified as a Silicon Junction diode.
This diode is suitable for power rectification and switching applications in various electronic circuits.
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