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Vishay Silicon Junction Switching Diode 1 A 400 V DO-213AB EGL41G-E3/96
Specifications
| Country of Origin | Taiwan |
|---|---|
| Diameter | 2.67mm |
| Brand | Vishay |
| Height | 2.67mm |
| Length | 5.2mm |
| Model | EGL41G-E3/96 |
| Width | 2.67mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-213AB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 400V |
Key Features
- Single silicon junction diode configured for efficient switching.
- Maximum forward current of 1 ampere for robust performance.
- Surface mount package type DO-213AB with 2 pins.
- Peak reverse recovery time of 50 nanoseconds for high-speed operation.
- Maximum forward voltage of 1.25 volts ensuring low power loss.
- Wide operating temperature range from -65°C to 175°C for reliability.
- Peak non-repetitive forward surge current up to 30 amperes.
- Compact dimensions with length 5.2 mm, width and diameter 2.67 mm each.
Product Description
Vishay EGL41G-E3/96 Silicon Junction Switching Diode is engineered for high-speed switching applications requiring reliable ultrafast recovery. Constructed with a single silicon junction, it supports continuous forward current up to 1 ampere and reverse repetitive voltage rating up to 400 volts, making it suitable for various industrial and electronic circuit designs.
The diode is housed in a compact surface mount DO-213AB package featuring 2 pins, enabling integration into space-constrained PCBs. It features a peak reverse recovery time of 50 nanoseconds ensuring minimal switching losses and efficient high-frequency operation. Its maximum forward voltage of 1.25 volts promotes low conduction losses during operation.
Designed for durability, this diode operates across a wide temperature range from -65°C to 175°C, suitable for demanding conditions in power supplies, inverters, and freewheeling diode applications. It can withstand peak non-repetitive forward surge currents up to 30 amperes, providing transient robustness to electronic circuits.
The compact physical dimensions of 5.2 mm length and 2.67 mm width/diameter contribute to flexible mounting options. Single silicon junction diode for switching applications. Rated for 1 A continuous forward current. Surface mount DO-213AB package with 2 pins.
50 ns peak reverse recovery time for ultrafast switching. 1.25 V maximum forward voltage to reduce losses. Wide operating temperature range (-65°C to 175°C). 30 A peak non-repetitive forward surge current capacity. Compact size 5.2 mm × 2.67 mm (L×W/D).
Suitable for power supplies, inverters, and freewheeling diode use. Explore more Vishay Semiconductor Switching Diodes and electronics components on EnvMart for reliable and efficient industrial and commercial applications.
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Frequently Asked Questions
The maximum forward current rating of this diode is 1 ampere.
The peak reverse recovery time for this model is 50 nanoseconds.
This diode has a maximum peak reverse repetitive voltage rating of 400 volts.
The dimensions of the DO-213AB package are 5.2 mm in length and 2.67 mm in width and diameter.
The diode operates within a wide temperature range from -65°C to 175°C.
The maximum forward voltage of this model is 1.25 volts.
The diode can withstand a peak non-repetitive forward surge current of up to 30 amperes.
This diode has a total of 2 pins.
It supports surface mounting, suitable for integration into PCBs.
The EGL41G-E3/96 is configured as a single silicon junction diode.
This diode is suitable for use in power supplies, inverters, and as a freewheeling diode.
The country of origin for this diode is Taiwan.
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