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onsemi PowerTrench Type P-Channel MOSFET, 4 A, 20 V, Enhancement Mode, 6-Pin SOT-23 FDC642P

Category MOSFETs Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3mm
Model FDC642P
Width 1.7mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 100mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 11nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf -1.2V

Key Features

  • Features a compact 6-pin SOT-23 package suitable for surface mounting.
  • Exhibits low drain-source resistance of 100mΩ to ensure efficient conduction.
  • Designed to operate across a wide temperature range from -55°C to 150°C.
  • Provides maximum power dissipation of 1.6 W for reliable performance.
  • Gate-source voltage ranges from -12 V to +12 V to enable flexible gate drive control.
  • Typical gate charge is 11 nC at Vgs, optimizing switching characteristics.
  • Compact dimensions with a length of 3 mm, width of 1.7 mm, and height of 1 mm.
  • Lacks automotive specific compliance but offers robust general purpose use.

Product Description

onsemi presents the FDC642P, a PowerTrench type P-Channel MOSFET designed for electronic applications requiring efficient switching and low conduction losses. Featuring an enhancement mode channel, this device supports a maximum continuous drain current of 4 A and a maximum drain-source voltage of 20 V, suitable for low-voltage power management tasks.

The MOSFET is encapsulated in a compact 6-pin SOT-23 surface mount package, making it ideal for space-constrained circuit boards in power and signal applications. With a low maximum drain-source resistance of 100mΩ, it ensures minimal power loss and thermal dissipation, maintaining reliable operation up to a maximum power dissipation of 1.6 W.

This transistor supports operation over a broad temperature range from -55°C to 150°C, making it suitable for a variety of industrial, automotive (non-certified), and consumer electronics environments. The gate-source voltage rating of ±12 V and a typical gate charge of 11 nC enable efficient switching speeds and easy gate drive compatibility.

The physical dimensions of 3 mm length by 1.7 mm width and 1 mm height facilitate integration into compact electronic designs. Although it does not carry specific automotive certifications, it benefits from onsemi's PowerTrench technology, known for reliable and consistent power performance.

Compact 6-pin SOT-23 surface mount package. PowerTrench technology by onsemi for enhanced performance. Maximum continuous drain current of 4 A and voltage rating of 20 V. Low on-resistance of 100mΩ for high efficiency. Wide operating temperature range from -55°C to 150°C.

Gate-source voltage range of -12 V to +12 V and low gate charge of 11 nC. Designed for industrial, consumer electronics, and low-voltage power applications.

Suitable for various power switching, load driving, and signal modulation tasks in electronic devices, the onsemi FDC642P is a reliable choice for engineers seeking high performance in a compact package. Browse the Electronics & Electricals section at EnvMart for more MOSFET solutions from onsemi and other leading brands.

Explore more products in our MOSFETs category.

onsemi PowerTrench Type P-Channel MOSFET, 4 A, 20 V, Enhancement Mode, 6-Pin SOT-23 FDC642P
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