onsemi UniFET N-Channel MOSFET 18 A 500 V Enhancement Mode 3-Pin TO-220 FDPF18N50T

onsemi FDPF18N50T UniFET N-Channel MOSFET is a high-voltage, enhancement-mode transistor designed for robust power electronics applications requiring efficient switching and low conduction losses. With a maximum continuous drain current of 18 A and a maximum drain-source voltage of 500 V, this device supports demanding industrial and consumer electronic circuits.

Housed in a durable 3-pin TO-220 through-hole package, the MOSFET offers a low maximum drain-source resistance of 265 milliohms ensuring minimized power dissipation. Its maximum power dissipation rating of 38.5 W and maximum operating temperature of 150°C allow for sustained operation under industrial workloads.

The typical gate charge of 45 nC at 4.5 V gate drive voltage enables fast switching performance. The device’s tolerance to gate-source voltages from -30 V to +30 V provides flexibility for use in various control topologies.

Key physical dimensions include a height of 16.07 mm, length of 10.36 mm, and width of 4.9 mm, supporting compact PCB mounting and design integration. The UniFET family incorporates advanced features such as internal gate-source ESD diode facilitating surge withstand capability above 2000 V HBM.

Applications for the FDPF18N50T include switching power converters, power factor correction circuits, flat panel display televisions, ATX power supplies, and electronic lamp ballasts. Its combination of robust electrical characteristics and package format make it a versatile solution for industrial, commercial, and consumer electronic designs.

This MOSFET operates in enhancement mode with a 3-pin TO-220 through-hole package. Its maximum continuous drain current is 18 A with a maximum drain-source voltage of 500 V. It features a low maximum drain-source resistance of 265 milliohms to optimize power efficiency.

The device supports a maximum power dissipation of 38.5 W and a maximum operating temperature of 150°C. The typical gate charge is 45 nC at a gate-source voltage of 4.5 V for efficient switching. Maximum gate-source voltage tolerance ranges from -30 V to +30 V expanding applicability in various circuits.

Dimensions of approximately 16.07 mm height, 10.36 mm length, and 4.9 mm width facilitate compact assembly. UniFET MOSFETs provide excellent avalanche energy strength and internal ESD protection diode. They are well-suited for power factor correction, flat panel TV power supplies, ATX power supplies, and electronic lamp ballasts.

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