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onsemi Small Signal NPN Transistor 1 A 160 V 900 mW TO-92 3-Pin KSC2383YTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.2mm
Length 5.1mm
Model KSC2383YTA
Width 4.1mm
Mount Type Through Hole
Series KSC2383
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 160V
Maximum Power Dissipation Pd 900mW
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current is 1 ampere.
  • Maximum collector emitter voltage rating is 160 volts.
  • Power dissipation capacity of 900 milliwatts ensures reliable operation.
  • Transistor configuration is single and polarity is NPN.
  • Mount type is through hole with a 3-pin TO-92 package.
  • Minimum DC current gain (hFE) is 60 for efficient amplification.
  • Maximum transition frequency (ft) is 100 MHz, suitable for high-frequency circuits.
  • Operating temperature range up to 150°C supports industrial uses.

Product Description

The onsemi KSC2383YTA is a small signal NPN bipolar junction transistor designed for general purpose applications requiring high voltage and current capabilities. It is housed in a standard TO-92 3-pin package for easy mounting on printed circuit boards via through-hole technology.

With a maximum DC collector current of 1 ampere and a collector emitter voltage rating of 160 volts, this transistor supports moderate power amplification needs in electronic circuits. Its power dissipation rating of 900 milliwatts allows reliable thermal management under typical operating conditions.

This transistor features a minimum DC current gain (hFE) of 60 and a maximum transition frequency of 100 MHz, making it suitable for switching and amplifying signals in audio, signal processing, and power interfacing applications. Its NPN polarity and single transistor configuration simplify integration into various circuit designs.

The device is rated to operate safely at temperatures up to 150°C, catering to industrial, commercial, and laboratory environments with demanding thermal conditions. Its compact dimensions of 5.1 mm length, 4.1 mm width, and 21.2 mm height contribute to space-efficient board layouts.

Typical use cases include consumer electronics, power management modules, signal amplification, and driver circuits. The robust design ensures consistent performance in diverse electronic component assemblies.

Maximum DC collector current: 1 A. Maximum collector emitter voltage: 160 V. Power dissipation: 900 mW. Transistor polarity: NPN. Package type: TO-92, 3 pins. Minimum DC current gain (hFE): 60. Maximum transition frequency (ft): 100 MHz.

Operating temperature up to 150°C. Physical size: 5.1 mm x 4.1 mm x 21.2 mm.

This onsemi bipolar transistor is a reliable and efficient component for electronic engineers requiring high voltage, moderate current switching, and signal amplification functionalities.

Explore more onsemi transistors and electronic components at EnvMart for industrial, laboratory, HVAC, and manufacturing applications.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor 1 A 160 V 900 mW TO-92 3-Pin KSC2383YTA
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