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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.2mm |
| Length | 5.1mm |
| Model | KSC2383YTA |
| Width | 4.1mm |
| Mount Type | Through Hole |
| Series | KSC2383 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 160V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 160V |
| Maximum Power Dissipation Pd | 900mW |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
The onsemi KSC2383YTA is a small signal NPN bipolar junction transistor designed for general purpose applications requiring high voltage and current capabilities. It is housed in a standard TO-92 3-pin package for easy mounting on printed circuit boards via through-hole technology.
With a maximum DC collector current of 1 ampere and a collector emitter voltage rating of 160 volts, this transistor supports moderate power amplification needs in electronic circuits. Its power dissipation rating of 900 milliwatts allows reliable thermal management under typical operating conditions.
This transistor features a minimum DC current gain (hFE) of 60 and a maximum transition frequency of 100 MHz, making it suitable for switching and amplifying signals in audio, signal processing, and power interfacing applications. Its NPN polarity and single transistor configuration simplify integration into various circuit designs.
The device is rated to operate safely at temperatures up to 150°C, catering to industrial, commercial, and laboratory environments with demanding thermal conditions. Its compact dimensions of 5.1 mm length, 4.1 mm width, and 21.2 mm height contribute to space-efficient board layouts.
Typical use cases include consumer electronics, power management modules, signal amplification, and driver circuits. The robust design ensures consistent performance in diverse electronic component assemblies.
Maximum DC collector current: 1 A. Maximum collector emitter voltage: 160 V. Power dissipation: 900 mW. Transistor polarity: NPN. Package type: TO-92, 3 pins. Minimum DC current gain (hFE): 60. Maximum transition frequency (ft): 100 MHz.
Operating temperature up to 150°C. Physical size: 5.1 mm x 4.1 mm x 21.2 mm.
This onsemi bipolar transistor is a reliable and efficient component for electronic engineers requiring high voltage, moderate current switching, and signal amplification functionalities.
Explore more onsemi transistors and electronic components at EnvMart for industrial, laboratory, HVAC, and manufacturing applications.
Explore more products in our Bipolar Transistors category.
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