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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.93mm |
| Length | 2.92mm |
| Model | MMBF4093 |
| Width | 1.3mm |
| Mount Type | Surface |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Sub Type | N-Channel Switch |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Drain Source Voltage Vds | 0.2V |
| Maximum Drain Source Resistance Rds | 80Ω |
| Maximum Power Dissipation Pd | 350mW |
| Maximum Gate Source Voltage Vgs | -40V |
| Drain Source Current Ids | 8 mA |
onsemi MMBF4093 is a single N-Channel Junction Field Effect Transistor (JFET) designed for switching applications, surface mounted in a SOT-23 package. It features a maximum drain-source voltage of 0.2 V, drain-source current up to 8 mA, and maximum power dissipation of 350 mW, making it suitable for low voltage electronic circuits.
This N-Channel JFET transistor is configured as a single unit with three pins in a compact surface mount form factor measuring 2.92 mm in length, 1.3 mm in width, and 0.93 mm in height. It operates reliably across a wide temperature range from -55°C minimum to 150°C maximum, providing good thermal stability in various electronic environments.
The device's maximum gate-source voltage of -40 V and low drain-source resistance of 80 Ω make it optimized for small signal switching performance. It does not have automotive or other standard approvals, catering mainly to industrial and consumer electronics applications.
This transistor is widely used in discrete semiconductor circuits for switching functions in industrial, laboratory, manufacturing, and electronic component assembly sectors where compact size and reliable performance are required.
This device is configured as a single N-Channel JFET transistor. Maximum drain-source voltage of 0.2 V and current of 8 mA. Maximum power dissipation of 350 mW ensures reliable operation. 3-pin SOT-23 surface mount package for compact integration.
Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage rated at -40 V. Low drain-source resistance of 80 Ω for efficient switching. Compact dimensions suitable for dense circuit layouts. Ideal for low voltage electronic switching applications.
Explore more semiconductor components and JFET transistors in the EnvMart catalog for your industrial, electronics, and manufacturing needs.
Explore more products in our Discrete Semiconductors category.
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