onsemi KSC1008CYTA is a small signal NPN bipolar junction transistor designed for low to medium power amplifier and switch applications in electronic circuits. It features a maximum DC collector current of 700 mA and a collector-emitter voltage rating of 60 V, making it suitable for various industrial, electronic, and laboratory applications requiring moderate current and voltage handling capabilities.
The transistor is housed in a compact TO-92 package with three through-hole pins, allowing easy PCB mounting and integration into discrete semiconductor assemblies. Its minimum DC current gain (hFE) of 40 supports efficient signal amplification in low-noise circuits.
With a maximum power dissipation of 800 mW and a maximum operating temperature of 150°C, the KSC1008CYTA offers stable performance under typical operating conditions encountered in consumer electronics, telecommunications, and industrial control systems.
The maximum transition frequency (fT) of 1 MHz enables suitability for low-frequency switching and amplification tasks. The device has maximum collector-base voltage of 80 V and emitter-base voltage of 8 V, adding robustness to voltage stresses during operation.
Dimensions are approximately 19.05 mm height, 5.2 mm length, and 4.19 mm width, making it a standard-sized transistor widely adopted across electronic component inventories. This single transistor configuration with NPN polarity is commonly used in circuits for driving loads, switching, and amplification tasks.
The onsemi KSC1008CYTA is ideal for industrial, consumer electronics, automotive (non-automotive rated), telecommunications, and educational laboratory use cases, where reliable bipolar transistors are required.
Package contents typically include the single transistor in TO-92 package ready for through-hole mounting and circuit integration. Supports maximum DC collector current of 700 mA for reliable performance. Collector-emitter voltage rating of 60 V ensures versatility in circuits.
Compact TO-92 package with 3 pins suitable for through-hole mounting. Minimum DC current gain of 40 for efficient amplification. Maximum power dissipation of 800 mW for thermal stability. Maximum transition frequency of 1 MHz suitable for low-frequency switching applications.
Maximum operating temperature up to 150°C for durable operation. Dimensions approximately 19.05 mm height, 5.2 mm length, and 4.19 mm width. NPN polarity in a single transistor configuration for standard bipolar junction transistor use.
Explore more Bipolar Transistors and semiconductor components in the Electronics & Electricals category at EnvMart for a wide range of industrial and laboratory applications.
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