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onsemi P-Channel MOSFET, 20 V, 8.4 A Maximum Continuous Drain Current, Surface Mount, SOT-223 Package NVF6P02
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 6.7mm |
| Model | NVF6P02 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | NVF6P02 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.3W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- This semiconductor device features a low maximum drain-source resistance of 70 mΩ for efficient switching.
- Designed for enhancement mode operation, providing reliable performance in power electronics.
- Maximum power dissipation is rated at 8.3 W, suitable for medium power applications.
- Operating temperatures range from -55°C to 150°C, ensuring durability in harsh environments.
- The package dimensions are 6.7 mm length, 3.7 mm width, and 1.65 mm height, enabling compact PCB layouts.
- Equipped with a 3-pin SOT-223 package for surface mount technology compatibility.
- Typical gate charge is 15 nC at Vgs, facilitating fast switching capabilities.
- Includes automotive standard compliance to AEC-Q101, ensuring automotive-grade reliability.
Product Description
onsemi NVF6P02 P-Channel MOSFET is a power semiconductor device designed for use in electronic circuits requiring switching and amplification. This component supports a maximum continuous drain current of 8.4 A and withstands a drain-source voltage of up to 20 V, making it suitable for various industrial and automotive power management applications. The device operates in enhancement mode and is housed in a 3-pin SOT-223 surface mount package, allowing for compact mounting and integration in high-density printed circuit boards.
The transistor boasts a low maximum drain-source resistance of 70 mΩ, which enables efficient power handling with minimal losses. It can dissipate power up to 8.3 W, making it reliable for medium power applications. This MOSFET is designed to operate across a wide temperature range from -55°C to 150°C, ensuring stable performance under challenging thermal conditions.
Physically, the device measures 6.7 mm in length, 3.7 mm in width, and 1.65 mm in height. Its automotive-grade compliance with standard AEC-Q101 certifies it for use in automotive electronics, guaranteeing durability and safety for critical applications.
Additional features include a typical gate charge of 15 nC at Vgs and a maximum gate-source voltage rating of -8 V to +8 V, offering fast switching response and robust voltage handling capabilities. The device exhibits a forward voltage drop of -1.2 V for efficiency in conducting states.
This MOSFET is ideal for use in power supplies, DC-DC converters, automotive electronics, and industrial control systems. It supports surface mounting technology, facilitating modern manufacturing and assembly techniques.
The device is RoHS compliant, supporting environmental and safety regulations. It is packaged for reel supply, optimizing insertion and production efficiency for high-volume manufacturing environments. Compatible with design tools offering 3D models, schematics, and footprints for ease of integration.
Explore more electronic components and semiconductor devices at EnvMart to meet your industrial, automotive, and manufacturing needs with trusted brands like onsemi.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.4 A.
It can withstand a maximum drain-source voltage of 20 V.
This model comes in a SOT-223 package with dimensions of 6.7 mm in length, 3.7 mm in width, and 1.65 mm in height.
The maximum power dissipation is rated at 8.3 W, suitable for medium power applications.
It operates within a temperature range of -55°C to 150°C.
The typical gate charge is 15 nC at Vgs.
It complies with the automotive standard AEC-Q101, ensuring reliability for automotive applications.
The maximum gate-source voltage rating is -8 V to +8 V.
The maximum drain-source resistance is 70 mΩ, allowing for efficient power handling.
This model supports surface mounting technology, facilitating compact PCB layouts.
The forward voltage drop is -1.2 V, which enhances efficiency during conduction.
It is suitable for applications such as power supplies, DC-DC converters, automotive electronics, and industrial control systems.
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