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onsemi PowerTrench Type P-Channel MOSFET, 8 A Continuous Drain Current, 12 V Maximum Drain Source Voltage FDME905PT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.5mm |
| Length | 1.6mm |
| Model | FDME905PT |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 97mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features a PowerTrench series for optimized power switching performance.
- Supports enhancement mode operation for reliable channel control.
- Equipped with 6-pin MLP package for compact surface mounting.
- Maximum power dissipation is 2.1 watts allowing for moderate power handling.
- Wide operating temperature range from -55°C to 150°C ensures durability in harsh conditions.
- Low on-resistance of 97 milliohms minimizes conduction losses.
- Gate charge of 14 nanocoulombs enables fast switching and improved efficiency.
- Supports maximum gate-source voltages of ±8 volts for robust gate control.
Product Description
onsemi FDME905PT is a PowerTrench Type P-Channel MOSFET designed for efficient power switching applications in electronics industries. It offers a maximum continuous drain current of 8 A and a maximum drain-source voltage of 12 V, making it suitable for low voltage, moderate current switching tasks.
The device utilizes enhancement mode channel operation and is packaged in a compact 6-pin MLP surface mount configuration. Its low on-resistance of 97 milliohms contributes to high efficiency and reduced power losses. The typical gate charge of 14 nanocoulombs allows for fast switching performance which is critical in synchronous rectification in AC/DC power supplies.
With operating temperature capabilities ranging from -55°C to 150°C, the FDME905PT can endure demanding industrial and commercial environments. Its low forward voltage diode (-1.2 V) and soft reverse recovery characteristics minimize electromagnetic interference and help eliminate the need for additional snubber circuits.
The small form factor dimensions (1.6 mm length and width, 0.5 mm height) make it ideal for compact PCB designs in power management and control circuits. This MOSFET series employs advanced shielded-gate technology to balance charge and significantly improve the figure of merit compared to previous generations.
Optimized for power efficiency and density in electronic switching applications. Compact 6-pin MLP surface mounting package enhances assembly ease. Wide temperature range ensures reliable operation in industrial and commercial environments.
Low on-resistance reduces heat generation and power loss. Soft body diode performance eliminates snubbers and enhances system reliability. Advanced shielded-gate structure improves switching efficiency and device longevity.
This MOSFET is well-suited for use in industrial power supplies, telecommunications, automotive systems, consumer electronics, and laboratory equipment. Its robust design and reliable performance make it a preferred choice for engineers seeking efficient power control solutions.
Explore more power management devices and semiconductor components at EnvMart for your next project or production line requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
It has a maximum drain-source voltage of 12 V.
The height of this MOSFET is 0.5 mm.
This model is packaged in a 6-pin MLP (Micro Leadframe Package) configuration.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 14 nanocoulombs (nC).
The on-resistance is 97 milliohms (mΩ).
It is suitable for industrial power supplies, telecommunications, automotive systems, consumer electronics, and laboratory equipment.
The maximum power dissipation is 2.1 watts (W).
The dimensions are 1.6 mm in length and width, and 0.5 mm in height.
The maximum gate-source voltage is ±8 volts.
This model operates in enhancement mode.
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