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onsemi PowerTrench N-Channel MOSFET, 120 A, 100 V, Enhancement Mode, 3-Pin TO-263 FDB035N10A

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 4.83mm
Length 10.67mm
Model FDB035N10A
Width 9.65mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 120A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 3.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 333W
Typical Gate Charge Qg @ Vgs 89nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.25V

Key Features

  • Rated for maximum continuous drain current of 120 A.
  • Maximum drain-source voltage of 100 V suitable for demanding power controls.
  • Features a low drain-source resistance of 3.5 milliohms for reduced power loss.
  • Incorporates enhancement mode channel with 3-pin TO-263 surface mount package.
  • Capable of dissipating up to 333 W of power during operation.
  • Operates effectively in temperature range from -55°C to 175°C.
  • Maximum gate-source voltage tolerance of -20 to +20 V ensures robust gate control.
  • Compact dimensions with length of 10.67 mm, width of 9.65 mm, and height of 4.83 mm.

Product Description

onsemi FDB035N10A PowerTrench N-Channel MOSFET is engineered for high-current power switching and management in industrial and electronic component applications. With a continuous drain current rating of 120 A and a maximum drain-source voltage of 100 V, it provides reliable and efficient operation in demanding conditions.

Constructed with enhancement mode N-channel design and housed in a 3-pin TO-263 surface mount package, this transistor exhibits a very low drain-source resistance of 3.5 milliohms, which minimizes conduction losses and enhances energy efficiency. The MOSFET supports a wide operating temperature range from -55°C to 175°C, making it suitable for harsh industrial environments.

The device has a maximum power dissipation of 333 W, ensuring it can handle substantial power loads. Its maximum gate-source voltage rating of ±20 V enables safe gate drive voltages. The typical gate charge of 89 nC facilitates fast switching speeds, making it ideal for power supply circuits, motor control, and other applications requiring rapid transistor response.

Physical dimensions measure 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, ensuring compatibility with compact circuit board layouts. This MOSFET is a reliable component for electronic device manufacturers focusing on power efficiency and thermal management.

Rated maximum continuous drain current of 120 A for high current applications. Supports maximum drain-source voltage of 100 V for robust voltage handling. Low Rds(on) resistance of 3.5 milliohms reduces power losses. Enhancement mode N-channel MOSFET architecture for efficient switching.

Surface mount package TO-263 with 3 pins simplifies PCB assembly. Wide operating temperature from -55°C to 175°C suitable for harsh environments. High maximum power dissipation of 333 W enables heavy power loads. Maximum gate-source voltage tolerance of -20 V to +20 V ensures gate durability.

Compact physical dimensions for flexible design integration.

This onsemi MOSFET is ideal for use in industrial electronics, power conversion equipment, motor drivers, and other demanding electronic applications. Browse the Semiconductor category on EnvMart for more high-quality discrete semiconductor components and MOSFET options.

onsemi PowerTrench N-Channel MOSFET, 120 A, 100 V, Enhancement Mode, 3-Pin TO-263 FDB035N10A
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