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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FDB035N10A |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 333W |
| Typical Gate Charge Qg @ Vgs | 89nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
onsemi FDB035N10A PowerTrench N-Channel MOSFET is engineered for high-current power switching and management in industrial and electronic component applications. With a continuous drain current rating of 120 A and a maximum drain-source voltage of 100 V, it provides reliable and efficient operation in demanding conditions.
Constructed with enhancement mode N-channel design and housed in a 3-pin TO-263 surface mount package, this transistor exhibits a very low drain-source resistance of 3.5 milliohms, which minimizes conduction losses and enhances energy efficiency. The MOSFET supports a wide operating temperature range from -55°C to 175°C, making it suitable for harsh industrial environments.
The device has a maximum power dissipation of 333 W, ensuring it can handle substantial power loads. Its maximum gate-source voltage rating of ±20 V enables safe gate drive voltages. The typical gate charge of 89 nC facilitates fast switching speeds, making it ideal for power supply circuits, motor control, and other applications requiring rapid transistor response.
Physical dimensions measure 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, ensuring compatibility with compact circuit board layouts. This MOSFET is a reliable component for electronic device manufacturers focusing on power efficiency and thermal management.
Rated maximum continuous drain current of 120 A for high current applications. Supports maximum drain-source voltage of 100 V for robust voltage handling. Low Rds(on) resistance of 3.5 milliohms reduces power losses. Enhancement mode N-channel MOSFET architecture for efficient switching.
Surface mount package TO-263 with 3 pins simplifies PCB assembly. Wide operating temperature from -55°C to 175°C suitable for harsh environments. High maximum power dissipation of 333 W enables heavy power loads. Maximum gate-source voltage tolerance of -20 V to +20 V ensures gate durability.
Compact physical dimensions for flexible design integration.
This onsemi MOSFET is ideal for use in industrial electronics, power conversion equipment, motor drivers, and other demanding electronic applications. Browse the Semiconductor category on EnvMart for more high-quality discrete semiconductor components and MOSFET options.
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