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STMicroelectronics N-Channel IGBT 20 A 600 V 3-Pin TO-263 Surface Mount STGB10NC60HDT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STGB10NC60HDT4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 65W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Maximum continuous collector current of 20 amperes.
- High collector emitter voltage rating of 600 volts.
- Power dissipation capacity up to 65 watts.
- Package type is TO-263 suitable for surface mounting.
- Three-pin configuration for efficient connectivity.
- Operating temperature range from -55°C to 150°C.
- Maximum gate emitter voltage tolerance of ±20 volts.
- Fast switching speed of 1 MHz.
Product Description
STMicroelectronics STGB10NC60HDT4 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching applications. It combines MOSFET gate drive simplicity with bipolar transistor high-current capability. This discrete semiconductor device is enclosed in a TO-263 package for surface mounting, making it suitable for compact and efficient power control solutions.
Rated for a maximum continuous collector current of 20A and a collector emitter voltage of 600V, this IGBT supports robust power handling up to 65W dissipation. Its gate emitter voltage tolerance up to ±20V and saturation voltage of 2.5V ensure reliable switching performance. The device operates efficiently within a temperature range of -55°C to 150°C, suitable for industrial, construction, HVAC, manufacturing, and automotive applications not requiring specific automotive standards.
The compact footprint features 3 pins and dimensions optimized for PCB surface mounting: 10.4 mm length, 9.35 mm width, and 4.6 mm height. Compliance with RoHS directives affirms the product’s environmental safety and quality.
Maximum continuous collector current of 20 amperes. Maximum collector emitter voltage of 600 volts. Power dissipation capacity of 65 watts. TO-263 package for surface mounting applications. 3-pin configuration for electrical connection.
Wide operating temperature range from -55°C to 150°C. Gate emitter voltage tolerance of ±20 volts. Fast switching frequency up to 1 MHz. Compact dimensions enable versatile PCB layout. RoHS compliant for environmentally-friendly use.
This IGBT is ideal for power management in electronics, manufacturing equipment, automotive control systems, HVAC units, and other industrial applications requiring efficient switching and robust electrical performance. Explore more power semiconductors from STMicroelectronics available at EnvMart for reliable industrial-grade solutions.
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Frequently Asked Questions
The maximum continuous collector current for this model is 20 amperes.
It has a maximum collector emitter voltage rating of 600 volts.
The power dissipation capacity of this IGBT is up to 65 watts.
This model is enclosed in a TO-263 package suitable for surface mounting.
The operating temperature range for this IGBT is from -55°C to 150°C.
The maximum gate emitter voltage tolerance is ±20 volts.
The dimensions of the TO-263 package are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
The maximum collector emitter saturation voltage is 2.5 volts.
This model has a fast switching speed of up to 1 MHz.
This IGBT features a 3-pin configuration for efficient connectivity.
Yes, this model is compliant with RoHS directives, affirming its environmental safety.
This IGBT is suitable for applications in power management, manufacturing equipment, automotive control systems, and HVAC units.
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