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onsemi Silicon Junction Switching Diode, Single, Surface Mount, 2 A Forward Current, 50 V Reverse Voltage MURS105T3G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.27mm
Length 4.6mm
Model MURS105T3G
Width 3.95mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type DO-214AA
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 40A
Maximum Forward Voltage Vf 710mV
Peak Reverse Recovery Time trr 35ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • Single silicon junction diode configured for switching applications.
  • Maximum forward current rating of 2 amperes suitable for power switching.
  • Surface mount design in compact DO-214AA package for PCB assembly.
  • Peak reverse repetitive voltage rating of 50 volts for voltage stress tolerance.
  • Maximum forward voltage drop of 710 millivolts to minimize power loss.
  • Fast peak reverse recovery time of 35 nanoseconds for efficient switching.
  • Operating temperature range from -65°C to 175°C for reliable performance.
  • Pin count of 2 enabling easy circuit integration.

Product Description

onsemi MURS105T3G is a high-quality silicon junction switching diode designed for power and signal rectification applications in industrial and electronic circuits. It features a single diode configuration housed in a compact DO-214AA surface mount package, making it ideal for automated PCB assembly processes.

With a maximum forward current of 2 A and a peak reverse repetitive voltage of 50 V, this diode is well suited for efficient power switching, rectification, and protection tasks in devices used in consumer electronics, industrial controls, and power supplies. The maximum forward voltage drop of 710 mV ensures low conduction losses, while the fast peak reverse recovery time of 35 ns improves switching efficiency and reduces electromagnetic interference.

The diode is rated to operate reliably over a wide temperature range from -65°C up to 175°C, supporting demanding environmental conditions commonly found in automotive, industrial, and HVAC systems. Its peak non-repetitive forward surge current rating of 40 A provides robustness during transient surges, such as motor startups or switching spikes.

The device measures 4.6 mm in length, 3.95 mm in width, and 2.27 mm in height, which allows for a compact footprint in modern circuit designs. It features two pins for surface mounting, facilitating stable mechanical and electrical connections.

This diode type does not carry specific automotive certifications but is suitable for general electronic and industrial applications requiring reliable semiconductor components. Single silicon junction diode configured for switching applications.

Maximum forward current rating of 2 amperes suitable for power switching. Surface mount design in compact DO-214AA package for PCB assembly. Peak reverse repetitive voltage rating of 50 volts for voltage stress tolerance.

Maximum forward voltage drop of 710 millivolts to minimize power loss. Fast peak reverse recovery time of 35 nanoseconds for efficient switching. Operating temperature range from -65°C to 175°C for reliable performance. Pin count of 2 enabling easy circuit integration.

Peak non-repetitive forward surge current rating of 40 amperes for transient conditions. Dimensions: length 4.6 mm, width 3.95 mm, height 2.27 mm.

This onsemi MURS105T3G diode is ideal for use in industrial electronic equipment, power supplies, electrical controls, and switching circuits where fast recovery and reliable switching performance are critical. It supports applications in manufacturing, HVAC systems, telecommunications, and automotive electronics.

Explore more high-quality discrete semiconductor components and Switching Diodes at EnvMart to meet your design and production needs.

onsemi Silicon Junction Switching Diode, Single, Surface Mount, 2 A Forward Current, 50 V Reverse Voltage MURS105T3G
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Frequently Asked Questions

The maximum forward current rating of the MUT3G diode is 2 amperes, making it suitable for power switching applications.

The maximum forward voltage drop of this model is 710 millivolts, which helps minimize power loss during operation.

The dimensions of the MUT3G diode are 4.6 mm in length, 3.95 mm in width, and 2.27 mm in height.

The operating temperature range for the MUT3G diode is from -65°C to 175°C, allowing for reliable performance in various environments.

The peak non-repetitive forward surge current rating for this diode is 40 amperes, providing robustness during transient conditions.

This diode uses a surface mount package type known as DO-214AA, which is compact for PCB assembly.

The MUT3G diode has a pin count of 2, facilitating easy circuit integration.

The MUT3G diode is suitable for power and signal rectification applications in industrial and electronic circuits, including power supplies and electrical controls.

The sub-type of the MUT3G diode is a silicon junction diode, specifically configured for switching applications.

The MUT3G diode is manufactured in India, as indicated by its country of origin.

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