World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

STMicroelectronics N-Channel IGBT 650 V 469 W 3-Pin TO-247 Through Hole STGW80H65DFB

Free Delivery in India | Lowest Global Shipping Charges

STMicroelectronics N-Channel IGBT 650 V 469 W 3-Pin TO-247 Through Hole STGW80H65DFB

Name: STMicroelectronics N-Channel IGBT 650 V 469 W 3-Pin TO-247 Through Hole STGW80H65DFB
Brand: STMicroelectronics
SKU: 371581
Price: 9.26 USD
Availability: InStock



Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	20.15mm
Model	STGW80H65DFB
Mount Type	Through Hole
Series	H
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Standards/Approvals	Lead (Pb) Free package, ECOPACK
Pin Count	3
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	2V
Channel Type	N
Maximum Power Dissipation Pd	469W
Maximum Gate Emitter Voltage VGEO	±20 V

Key Features

High-efficiency power semiconductor combining MOSFET and bipolar transistor features.
Maximum collector emitter voltage of 650 V with a saturation voltage of 2 V.
Maximum power dissipation of 469 W ensures robust performance.
Operational temperature range from -55°C to 175°C suitable for harsh environments.
±20 V maximum gate emitter voltage protects the gate from overvoltage damage.
Compact TO-247 package with 3 pins for easy through-hole mounting.
Lead (Pb) free ECOPACK package meeting environmental standards.
Series H variant with a height of 20.15 mm for compact integration.

Product Description

STMicroelectronics STGW80H65DFB is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT), combining the fast switching and simple gate-drive characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors. This device is designed for efficient and reliable power switching in industrial, electronic, and manufacturing applications.

The transistor is rated for a maximum collector emitter voltage of 650 V and a power dissipation of 469 W, making it suitable for demanding power control circuits. Its maximum collector emitter saturation voltage of 2 V ensures minimal power loss during conduction. It supports a wide operating temperature range from -55°C to 175°C, accommodating harsh and varying operational conditions.

The STGW80H65DFB comes in a 3-pin TO-247 through-hole package, facilitating easy PCB mounting and reliable thermal performance. The device includes a maximum gate emitter voltage rating of ±20 V to safeguard gate integrity. The product is manufactured with a lead-free ECOPACK package, enhancing environmental compliance.

This IGBT is widely used in power electronics, motor drives, industrial inverter circuits, power supplies, and other applications requiring robust, fast switching and efficient power control. It is not recommended for automotive standard use but excels in other industrial electronics domains.

High-efficiency power semiconductor with combined MOSFET and bipolar transistor features. Maximum collector emitter voltage: 650 V. Maximum power dissipation: 469 W. Operating temperature range: -55°C to 175°C. Maximum gate emitter voltage: ±20 V.

3-pin TO-247 through-hole package for easy mounting. Lead (Pb) free ECOPACK package. Series H with 20.15 mm height. Explore more products in the IGBT category for advanced power semiconductor solutions and industrial electronic components at EnvMart.