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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 47.8mm |
| Length | 20.3mm |
| Model | MJL1302AG |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-264 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -260V |
| Minimum DC Current Gain hFE | 45 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 260V dc |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | -15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi MJL1302AG is a high-power PNP transistor designed for robust industrial and electronic applications requiring up to 200 watts of power dissipation and a maximum collector current of -15 amperes. Its configuration as a single transistor in a TO-264 package ensures easy installation in through-hole PCB mount types.
This transistor operates reliably within a temperature range from -65°C to a maximum of 150°C, making it suitable for demanding environments including manufacturing, power management systems, and semiconductor-based devices.
The electrical characteristics include a maximum collector emitter voltage of -260 volts and a maximum collector base voltage of 260 volts DC, complemented by a minimum DC current gain (hFE) of 45, which guarantees efficient current amplification. The device supports a maximum transition frequency of 1 MHz, enabling medium frequency performance for diverse electronic circuit requirements.
Physically, the transistor measures 47.8 mm in height, 20.3 mm in length, and 5.3 mm in width, with a 3-pin configuration that allows standard electrical connections. This product is categorized under power transistors within the semiconductor industry sector.
Suitable for applications in industrial electronics, power control circuits, and electronic component manufacturing, the MJL1302AG transistor ensures reliable, high-performance operation essential for efficient power management.
High power dissipation of up to 200 W. Wide operating temperature range from -65°C to 150°C. Robust TO-264 package with through hole mount. PNP transistor polarity with single transistor configuration. Maximum collector current of -15 A for demanding applications.
Maximum collector emitter voltage of -260 V. Minimum DC current gain of 45 provides efficient transistor gain. Maximum transition frequency of 1 MHz. Compact 3-pin design measuring 47.8 mm height, 20.3 mm length, and 5.3 mm width.
New product condition with onsemi reliability and quality. Explore our full range of Power Transistors and semiconductor components for advanced electronic manufacturing and applications on EnvMart.
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