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onsemi NPN Power Transistor 10A 80V 36W TO-220 Through Hole MJF44H11G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.18mm
Length 10.63mm
Model MJF44H11G
Width 4.9mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 10V dc
Maximum Power Dissipation Pd 36W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 20MHz

Key Features

  • Maximum DC collector current of 10 amperes ensures high power handling.
  • Collector-emitter voltage rated at 80 volts for robust operation.
  • Power dissipation capacity up to 36 watts supports industrial applications.
  • Low minimum DC current gain of 60 enhances switching performance.
  • Designed with a 3-pin single transistor configuration for easy mounting.
  • Operating temperature range from -55°C to 150°C enables use in harsh environments.
  • Package type TO-220 compatible with through-hole mounting on PCBs.
  • Maximum transition frequency of 20 MHz suitable for medium frequency switching.

Product Description

onsemi MJF44H11G is a robust NPN power transistor designed for high current and voltage applications. Delivered in a three-pin TO-220 through-hole package, it supports a maximum DC collector current of 10 amperes and a collector-emitter voltage of 80 volts, making it ideal for power switching and amplifier applications in electronics and industrial equipment.

This transistor features a maximum power dissipation of 36 watts, allowing efficient thermal management for reliable operation under load conditions. With a minimum DC current gain (hFE) of 60 and a maximum transition frequency of 20 MHz, it provides effective amplification and switching performance suitable for medium-frequency circuits.

The component operates effectively across a wide temperature range from -55°C to 150°C, ensuring stable performance in demanding environmental conditions. The 3-pin configuration and through-hole mount type enable straightforward PCB assembly and integration into power control and signal amplification circuits.

Compact in size with physical dimensions of 10.63 mm length, 4.9 mm width, and 1.18 mm height, this transistor fits well into dense electronic assemblies. The MJF44H11G does not carry specific automotive or industrial certifications but meets standard industrial semiconductor specifications for Power Transistors.

Common industrial applications include power supplies, motor drivers, amplifier circuits, and general-purpose switching. Its NPN polarity and standard TO-220 package make it suitable for replacement and retrofit in existing electronic designs requiring robust performance.

Maximum DC collector current of 10 amperes ensures high power handling. Collector-emitter voltage rated at 80 volts for robust operation. Power dissipation capacity up to 36 watts supports industrial applications. Low minimum DC current gain of 60 enhances switching performance.

Designed with a 3-pin single transistor configuration for easy mounting. Operating temperature range from -55°C to 150°C enables use in harsh environments. Package type TO-220 compatible with through-hole mounting on PCBs.

Maximum transition frequency of 20 MHz suitable for medium frequency switching. NPN transistor polarity widely used in power control circuits. Dimensions: length 10.63mm, width 4.9mm, height 1.18mm for compact installation.

Explore more power transistor variants and related electronic components at EnvMart for reliable industrial and laboratory applications.

onsemi NPN Power Transistor 10A 80V 36W TO-220 Through Hole MJF44H11G
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Frequently Asked Questions

The maximum DC collector current for the MJF44H11G is 10 amperes, allowing for high power handling in various applications.

This model has a collector-emitter voltage rating of 80 volts, ensuring robust operation in high-voltage applications.

The transistor can dissipate up to 36 watts, which supports efficient thermal management during operation.

It features a minimum DC current gain (hFE) of 60, enhancing its switching performance.

The MJF44H11G has a maximum transition frequency of 20 MHz, making it suitable for medium frequency switching applications.

This transistor has dimensions of 10.63 mm in length, 4.9 mm in width, and 1.18 mm in height, allowing for compact installation.

The operating temperature range for the MJF44H11G is from -55°C to 150°C, enabling its use in harsh environments.

It is designed for through-hole mounting, compatible with standard PCB assembly.

This model is designed with a single transistor configuration, featuring a 3-pin layout for easy integration.

The maximum emitter-base voltage (VEBO) for the MJF44H11G is 5 volts.

Common applications include power supplies, motor drivers, amplifier circuits, and general-purpose switching.

The MJF44H11G has an NPN polarity, making it suitable for various power control circuits.

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