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onsemi PNP Power Transistor 4A, 100V, TO-252 Package, Surface Mount, 3-Pin MJD253T4G

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.63mm
Length 0.27mm
Model MJD253T4G
Width 0.09mm
Mount Type Surface
Series MJD253
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -100V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 100V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 12.5W
Maximum DC Collector Current Idc -4A
Transistor Configuration Single
Maximum Transition Frequency ft 10MHz

Key Features

  • Maximum DC collector current of 4 amperes for robust power handling.
  • Collector emitter voltage rating of 100 volts suitable for medium power circuits.
  • Surface mount TO-252 package with 3 pins for compact PCB layouts.
  • Minimum DC current gain of 40 ensuring efficient amplification.
  • Durable operating temperature range from -65°C to 150°C.
  • Maximum power dissipation capability of 12.5 watts for reliable thermal performance.
  • Automotive qualified to AEC-Q101 standard enhancing application reliability.
  • Maximum transition frequency up to 10 MHz for moderate frequency operations.

Product Description

onsemi MJD253T4G is a PNP power transistor engineered for high current and voltage applications often used in power management and switching circuits. It features a surface mount TO-252 package with 3 pins, enabling compact design solutions on printed circuit boards.

With a maximum DC collector current of 4 A and a collector emitter voltage of 100 V, this transistor can handle medium power loads efficiently. Its minimum DC current gain of 40 provides effective current amplification, making it suitable for a variety of industrial, automotive, and commercial electronic circuits.

The device is rated for a maximum power dissipation of 12.5 W, allowing safe operation under significant thermal loads. It is operational in a wide temperature range from -65°C to 150°C, ensuring reliability in harsh environments including automotive applications, as it complies with the AEC-Q101 automotive standard.

Additional technical specifications include a maximum transition frequency of 10 MHz and transistor polarity as PNP with single transistor configuration. The compact physical footprint with dimensions 0.63 mm in height, 0.27 mm in length, and 0.09 mm in width contributes to space-saving PCB designs.

Maximum DC collector current of 4 amperes for robust power handling. Collector emitter voltage rating of 100 volts suitable for medium power circuits. Surface mount TO-252 package with 3 pins for compact PCB layouts. Minimum DC current gain of 40 ensuring efficient amplification.

Durable operating temperature range from -65°C to 150°C. Maximum power dissipation capability of 12.5 watts for reliable thermal performance. Automotive qualified to AEC-Q101 standard enhancing application reliability. Maximum transition frequency up to 10 MHz for moderate frequency operations.

Designed with single transistor configuration and PNP polarity. Compact dimensions: height 0.63 mm, length 0.27 mm, width 0.09 mm.

This transistor is ideally suited for use in industrial power management, automotive electronic systems, laboratory electronics, and commercial electronic equipment requiring reliable medium power PNP transistors in surface mount configuration.

Explore the wide range of Power Transistors on EnvMart for your semiconductor component needs.

onsemi PNP Power Transistor 4A, 100V, TO-252 Package, Surface Mount, 3-Pin MJD253T4G
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