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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.63mm |
| Length | 10.29mm |
| Model | MJB42CT4G |
| Width | 4.83mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 65W |
| Maximum DC Collector Current Idc | -6A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi MJB42CT4G is a high-performance PNP power transistor in a TO-263 surface mount package designed for industrial and automotive applications. It delivers a maximum DC collector current of -6 A and maximum collector emitter voltage rating of -100 V, making it suitable for medium power switching and amplification tasks.
This transistor achieves a maximum power dissipation of 65 W under recommended operating conditions, ensuring robustness in demanding environments. The hFE minimum gain of 15 guarantees effective current amplification across its operating range.
Engineered to withstand harsh conditions, the MJB42CT4G supports operating temperatures from -65°C up to 150°C, which makes it apt for automotive electronics and heavy-duty industrial applications. The product meets the AEC-Q101 automotive standard, underscoring its reliability for use in vehicle systems.
Featuring a three-pin layout in a compact TO-263 surface mount package, the transistor supports efficient PCB integration and heat dissipation. The maximum transition frequency of 1 MHz allows it to be used in moderate frequency circuits.
This PNP configuration transistor is characterized by a 100 V collector base voltage and 5 V emitter base voltage, providing versatility in circuit design. Physical package dimensions are 10.29 mm in length, 4.83 mm in width, and 0.63 mm in height, facilitating space-saving PCB layouts.
The transistor supports a maximum DC collector current of -6 A. Rated for a maximum collector emitter voltage of -100 V. Power dissipation capability up to 65 W enhances durability. Minimum DC current gain (hFE) is 15 for consistent amplification.
Operating temperature range covers -65°C to 150°C for broad applications. Surface mount TO-263 package with 3 pins promotes compact assembly. Complies with automotive AEC-Q101 standard ensuring reliability. Maximum frequency transition rate is 1 MHz for moderate frequency use.
Physical dimensions suitable for efficient PCB design.
Ideal for use in electronics, power control, automotive circuit boards, industrial manufacturing, and HVAC systems, the onsemi MJB42CT4G is engineered to provide reliable transistor performance at medium power levels.
Explore more semiconductor Power Transistors from onsemi and other trusted brands on EnvMart to meet your industrial electronics needs.
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