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onsemi PNP Power Transistor TO-263 Package Surface Mount -6 A, -100 V, 65 W MJB42CT4G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.63mm
Length 10.29mm
Model MJB42CT4G
Width 4.83mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -100V
Minimum DC Current Gain hFE 15
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 65W
Maximum DC Collector Current Idc -6A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • The transistor supports maximum power dissipation of 65 W for robust performance.
  • It has a minimum DC current gain (hFE) of 15 ensuring reliable amplification.
  • Operating temperature ranges from -65°C to 150°C for diverse industrial applications.
  • Pin count of 3 in a compact TO-263 package supports efficient PCB mounting.
  • Automotive qualified to AEC-Q101 standard for high reliability in automotive systems.
  • The transistor configuration is single PNP type with surface mount capabilities.
  • Maximum collector base voltage VCBO is rated at 100 V dc.
  • Maximum emitter base voltage VEBO is 5 V, suitable for power transistor switching.

Product Description

onsemi MJB42CT4G is a high-performance PNP power transistor in a TO-263 surface mount package designed for industrial and automotive applications. It delivers a maximum DC collector current of -6 A and maximum collector emitter voltage rating of -100 V, making it suitable for medium power switching and amplification tasks.

This transistor achieves a maximum power dissipation of 65 W under recommended operating conditions, ensuring robustness in demanding environments. The hFE minimum gain of 15 guarantees effective current amplification across its operating range.

Engineered to withstand harsh conditions, the MJB42CT4G supports operating temperatures from -65°C up to 150°C, which makes it apt for automotive electronics and heavy-duty industrial applications. The product meets the AEC-Q101 automotive standard, underscoring its reliability for use in vehicle systems.

Featuring a three-pin layout in a compact TO-263 surface mount package, the transistor supports efficient PCB integration and heat dissipation. The maximum transition frequency of 1 MHz allows it to be used in moderate frequency circuits.

This PNP configuration transistor is characterized by a 100 V collector base voltage and 5 V emitter base voltage, providing versatility in circuit design. Physical package dimensions are 10.29 mm in length, 4.83 mm in width, and 0.63 mm in height, facilitating space-saving PCB layouts.

The transistor supports a maximum DC collector current of -6 A. Rated for a maximum collector emitter voltage of -100 V. Power dissipation capability up to 65 W enhances durability. Minimum DC current gain (hFE) is 15 for consistent amplification.

Operating temperature range covers -65°C to 150°C for broad applications. Surface mount TO-263 package with 3 pins promotes compact assembly. Complies with automotive AEC-Q101 standard ensuring reliability. Maximum frequency transition rate is 1 MHz for moderate frequency use.

Physical dimensions suitable for efficient PCB design.

Ideal for use in electronics, power control, automotive circuit boards, industrial manufacturing, and HVAC systems, the onsemi MJB42CT4G is engineered to provide reliable transistor performance at medium power levels.

Explore more semiconductor Power Transistors from onsemi and other trusted brands on EnvMart to meet your industrial electronics needs.

onsemi PNP Power Transistor TO-263 Package Surface Mount -6 A, -100 V, 65 W MJB42CT4G
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Frequently Asked Questions

The MJB42CT4G transistor supports a maximum power dissipation of 65 W under recommended operating conditions.

This model has a maximum collector emitter voltage rating of -100 V.

The minimum DC current gain (hFE) of this transistor is 15, ensuring reliable amplification.

The operating temperature range for this model is from -65°C to 150°C, making it suitable for diverse industrial applications.

The MJB42CT4G features a pin count of 3 and comes in a TO-263 surface mount package.

This transistor is rated for a maximum DC collector current of -6 A.

The MJB42CT4G complies with the AEC-Q101 automotive standard, ensuring high reliability in automotive systems.

The maximum emitter base voltage (VEBO) for the MJB42CT4G is 5 V.

The maximum transition frequency of this transistor is 1 MHz, allowing it to be used in moderate frequency circuits.

The physical dimensions of the MJB42CT4G are 10.29 mm in length, 4.83 mm in width, and 0.63 mm in height.

The MJB42CT4G is a single PNP type transistor, suitable for various applications.

The MJB42CT4G is manufactured in India.

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