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STMicroelectronics STripFET H7 N-Channel Power MOSFET 180 A, 100 V, 3-Pin TO-220 STP310N10F7

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STMicroelectronics STripFET H7 N-Channel Power MOSFET 180 A, 100 V, 3-Pin TO-220 STP310N10F7

Name: STMicroelectronics STripFET H7 N-Channel Power MOSFET 180 A, 100 V, 3-Pin TO-220 STP310N10F7
Brand: STMicroelectronics
SKU: 370139
Price: 7.6 USD
Availability: InStock

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Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	15.75mm
Length	10.4mm
Model	STP310N10F7
Width	4.6mm
Mount Type	Through Hole
Series	STripFET H7
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	180A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	2.7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	315W
Typical Gate Charge Qg @ Vgs	180nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V

Key Features

TO-220 package type with 3 pins for through-hole mounting.
Maximum power dissipation of 315 W enables high power handling capability.
Ultra-low on-resistance of 2.7 mΩ reduces conduction losses.
Wide operating temperature range from -55°C to 175°C ensures durable performance.
Typical gate charge of 180 nC supports fast switching applications.
Enhancement mode channel operation for efficient control.
Maximum gate-source voltage rating of -20 V to +20 V enhances device reliability.
Designed for demanding applications in power management and industrial electronics.

Product Description

STMicroelectronics STP310N10F7 is a STripFET H7 series N-Channel Power MOSFET offering a maximum continuous drain current of 180 A and a drain-source voltage rating of 100 V. Packaged in a robust 3-pin TO-220 through-hole format, this device delivers reliable and efficient power switching performance.

The MOSFET features an ultra-low drain-source resistance of 2.7 mΩ, reducing conduction losses and enhancing overall energy efficiency. It supports maximum power dissipation up to 315 W and operates within a wide temperature range from -55°C to 175°C, suitable for demanding industrial and power management applications.

Typical gate charge of 180 nC enables high-speed switching, making this device ideal for load switching, motor control, and power supply designs. The device supports enhancement mode operation with a maximum gate-source voltage tolerance of -20 to +20 V, assuring robust control and device lifespan.

With compact dimensions (15.75 mm height, 10.4 mm length, 4.6 mm width), the STP310N10F7 allows easy integration into a variety of electronic assemblies. It complies with industrial standards and is optimized for high efficiency and thermal management.

Applications include industrial power systems, electronic converters, motor drives, and advanced power electronics requiring high current and voltage handling capabilities. This MOSFET offers proven performance and reliability in electronic component portfolios.

TO-220 package type with 3 pins for through-hole mounting. Maximum power dissipation of 315 W. Ultra-low on-resistance of 2.7 mΩ. Wide operating temperature range from -55°C to 175°C. Typical gate charge of 180 nC for fast switching.

Enhancement mode channel operation. Maximum gate-source voltage of -20 V to +20 V. Compact size with 15.75 mm height, 10.4 mm length, and 4.6 mm width. Explore the Electronics & Electricals category at EnvMart for more Power MOSFETs and discrete semiconductor components from top brands including STMicroelectronics.