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STMicroelectronics N-Channel MDmesh M2 Power MOSFET, 5.5 A, 650 V, 3-Pin TO-252 STD9N60M2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD9N60M2 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 780mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Designed for resonant switching supplies and LLC converters with low gate charge.
- Enhancement mode channel type for improved switching performance.
- Robust maximum power dissipation of 60 W and operating temperature range from -55°C to 150°C.
- Typical gate charge of 10 nC at Vgs ensuring efficient gate driving.
- Maximum drain-source resistance of 780 mΩ for low conduction losses.
- Forward voltage drop of 1.6 V enhances efficiency.
- Reliable surface mount package suitable for compact electronic designs.
Product Description
STMicroelectronics STD9N60M2 is a high-performance N-Channel MDmesh™ M2 Power MOSFET designed to meet industrial and commercial needs in power electronics. Featuring a continuous drain current capacity of 5.5 amps and a drain-source voltage rating of 650 volts, this transistor is suitable for high-voltage switching applications.
The device is housed in a 3-pin TO-252 surface-mount package providing a compact footprint with dimensions 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height, facilitating space-saving PCB designs.
With enhancement mode channel operation and a low typical gate charge of 10 nC at gate-source voltage, the MOSFET enables efficient switching performance in resonant-type switching supplies such as LLC converters.
Its maximum drain-source resistance of 780 milliohms ensures low conduction losses, while the forward voltage drop of 1.6 volts further improves efficiency in power circuits. The MOSFET supports a maximum power dissipation of 60 watts and is rated to operate from -55°C up to 150°C, making it suitable for harsh industrial environments.
This transistor is ideal for use in power supply modules, industrial motor drives, and general power management applications requiring reliable N-Channel MOSFET performance. Designed for resonant switching supplies and LLC converters with low gate charge.
Enhancement mode channel type for improved switching performance. Robust maximum power dissipation of 60 W and operating temperature range from -55°C to 150°C. Compact dimensions: 6.6 mm length, 6.2 mm width, and 2.4 mm height.
Typical gate charge of 10 nC at Vgs ensuring efficient gate driving. Maximum drain-source resistance of 780 mΩ for low conduction losses. Forward voltage drop of 1.6 V enhances efficiency. Reliable surface mount package suitable for compact electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.5 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
The typical gate charge at gate-source voltage (Vgs) is 10 nC.
The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum power dissipation for this model is 60 W.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 780 mΩ.
The forward voltage drop is 1.6 V, which enhances efficiency in power circuits.
This model uses an enhancement mode N-channel type for improved switching performance.
The maximum gate-source voltage is -25 V to +25 V.
It is suitable for applications such as power supply modules, industrial motor drives, and general power management.
This model is designed for surface mounting.
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