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STMicroelectronics MDmesh M5 N-Channel MOSFET, 22 A, 600 V Enhancement, 5-Pin PowerFLAT STL36N55M5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 950μm |
| Length | 8mm |
| Model | STL36N55M5 |
| Width | 8mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerFLAT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.8W |
| Typical Gate Charge Qg @ Vgs | 62nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features an enhancement-mode N-channel configuration.
- It comes in a compact 5-pin PowerFLAT surface mount package.
- Maximum power dissipation is 2.8 W, suitable for energy-conscious hard switching designs.
- Typical gate charge is 62 nC at Vgs, enabling efficient driving and switching.
- Operates reliably across a temperature range from -55°C to 150°C.
- Low maximum drain-source resistance of 90 mΩ reduces conduction losses.
- Maximum gate-source voltage tolerance is ±25 V.
- Forward voltage drop is 1.5 V, optimized for minimal losses.
Product Description
STMicroelectronics STL36N55M5 is a MDmesh M5 series N-channel Power MOSFET optimized for high-power PFC and PWM topologies. It supports a maximum continuous drain current of 22 A and can withstand up to 600 V between drain and source, making it well suited for demanding power electronics applications.
The device features an enhancement-mode channel type, housed in a 5-pin PowerFLAT surface mount package. Its low on-state resistance (90 mΩ) and modest gate charge (62 nC) contribute to high efficiency and low switching losses, essential for energy-conscious, compact, and reliable hard switching circuits.
This MOSFET is capable of dissipating up to 2.8 W power and functions safely across a wide temperature range from -55°C up to 150°C, ensuring robust performance in industrial and commercial environments.
The compact device dimensions of 8 mm length, 8 mm width, and a 950 μm profile height facilitate integration in dense PCB layouts. The maximum gate-source voltage rating of ±25 V and a forward voltage of 1.5 V enable dependable switching functionality.
Applications include solar power inverters, consumer product power supplies, and advanced electronic lighting controls where efficient high-power switching is critical. Enhancement-mode N-channel conduction for power electronics.
Low on-state resistance and gate charge for reduced power losses. Compact PowerFLAT 5-pin surface mount package. Wide operating temperature range from -55°C to 150°C. Ideal for solar, consumer electronics, and lighting control applications.
Explore the Electronics & Electricals category on EnvMart for more power semiconductors and MOSFET solutions from STMicroelectronics.
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Frequently Asked Questions
The maximum continuous drain current of this model is 22 A.
It can withstand a maximum drain-source voltage of 600 V.
The typical gate charge at Vgs is 62 nC.
This model operates reliably across a temperature range from -55°C to 150°C.
The forward voltage drop is 1.5 V, optimized for minimal losses.
It has a maximum power dissipation of 2.8 W.
The dimensions of the PowerFLAT package are 8 mm in length, 8 mm in width, and 950 μm in height.
The maximum gate-source voltage tolerance is ±25 V.
This model features an enhancement-mode N-channel configuration.
The maximum drain-source resistance is 90 mΩ, which helps reduce conduction losses.
It is suitable for applications such as solar power inverters, consumer product power supplies, and advanced electronic lighting controls.
This model uses a surface mount type in a compact package.
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