STMicroelectronics MDmesh M2 N-Channel MOSFET, 650 V, 13 A, 3-Pin TO-263 Package STB18N60M2

STMicroelectronics STB18N60M2 is a high-voltage N-channel MDmesh M2 series Power MOSFET designed for demanding industrial and electronic applications. This transistor features a maximum continuous drain current of 13 A and can withstand drain-source voltages up to 650 V, making it suitable for power switching tasks in resonant switching power supplies such as LLC converters.

The enhancement mode channel with a low typical gate charge of 21.5 nC results in high switching speeds and minimized power losses. Packaged in a compact 3-pin TO-263 surface mount package, this MOSFET supports efficient PCB layout and thermal management with a maximum power dissipation of 110 W. The device operates reliably over a wide temperature range from -55°C to 150°C, which suits various industrial environments.

With a maximum drain-source resistance of 280 mΩ, the STB18N60M2 ensures minimal conduction losses. Its gate-source voltage tolerance of ±25 V allows it to withstand voltage spikes without damage. The forward voltage of 1.6 V complements its performance for efficient power delivery.

Maximum continuous drain current of 13 amps. 650 V maximum drain-source voltage rating. Low gate charge facilitates efficient switching. Surface mount TO-263 package with 3 pins. High power dissipation capability of 110 W.

Wide operating temperature range (-55°C to 150°C). Minimal conduction losses with 280 mΩ drain-source resistance. Robust gate-source voltage protection, ±25 V maximum. Forward voltage of 1.6 V. Compact physical dimensions enable space-saving designs.

This MOSFET is widely applicable in power electronics, industrial automation, and energy management equipment. Its efficient switching characteristics and robust voltage and current handling make it ideal for manufacturers and engineers designing high-performance power supply circuits.

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