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STMicroelectronics MDmesh M5 N-Channel Power MOSFET, 11 A, 650 V Enhancement Mode, 3-Pin TO-220FP STF15N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF15N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.34Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- The device features low on-state resistance of 0.34Ω for efficient conduction.
- Maximum power dissipation is rated at 85 W, suitable for high power applications.
- Typical gate charge is 22 nC at Vgs, ensuring fast switching capabilities.
- Operating temperature range from -55°C to 150°C allows use in harsh environments.
- Designed with a through-hole mount and 3-pin configuration for easy PCB integration.
- Forward voltage is 1.5 V, minimizing power losses during switching.
- Maximum gate-source voltage rating is ±25 V to protect gate integrity.
- Compact dimensions with length 10.4 mm, width 4.6 mm, and height 16.4 mm.
Product Description
STMicroelectronics STF15N65M5 is a high-performance N-channel MDmesh™ M5 series power MOSFET with a maximum continuous drain current of 11 A and a drain-source voltage rating of 650 V. It features an enhancement mode channel and low drain-source resistance, making it well-suited for energy-efficient power management applications.
This device is housed in a 3-pin TO-220FP package designed for through-hole mounting, facilitating stable and reliable electronic circuit assembly. It can withstand operating temperatures ranging between -55°C and 150°C, offering robust performance in industrial and commercial environments.
The MDmesh M5 technology reduces on-state losses relative to silicon area while maintaining low gate charge, which contributes to faster switching and minimized power dissipation. Forward voltage drop of 1.5 V helps in reducing conduction losses during operation, enhancing overall efficiency.
Typical applications include power factor correction circuits, PWM topologies, electronic lighting control, solar power inverters, and power supplies for consumer electronics. The transistor is optimized for compact and reliable hard-switching requirements.
The device offers low on-resistance of 0.34Ω for efficient power conduction. Maximum power dissipation of 85 W supports high power applications. Gate charge of 22 nC enables fast switching times. Designed for use in harsh temperature environments from -55°C to 150°C.
3-pin, through-hole mount TO-220FP package ensures easy PCB integration. Forward voltage is 1.5 V to reduce power losses. Maximum gate-source voltage ratings of -25 V and +25 V protect against voltage surges. Physical dimensions are 16.4 mm height, 10.4 mm length, and 4.6 mm width for compact circuit design.
This new power MOSFET from STMicroelectronics ensures reliable performance in industrial, laboratory, construction, HVAC, manufacturing, and renewable energy sectors. Its design supports advanced power conversion systems requiring low power loss and fast switching characteristics.
Explore the full range of Power MOSFETs and other semiconductor devices available at EnvMart for your engineering and industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
This power MOSFET has a maximum drain-source voltage rating of 650 V.
The on-state resistance is rated at 0.34Ω, which contributes to efficient power conduction.
The typical gate charge at Vgs is 22 nC, allowing for fast switching capabilities.
It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.
The dimensions are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
This model is housed in a TO-220FP package designed for through-hole mounting.
The maximum power dissipation is rated at 85 W, suitable for high power applications.
The forward voltage drop is 1.5 V, which helps minimize power losses during operation.
The maximum gate-source voltage rating is ±25 V, which protects the gate integrity.
Typical applications include power factor correction circuits, PWM topologies, electronic lighting control, and solar power inverters.
This device features an enhancement mode N-channel configuration.
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