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STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V Enhancement Mode, 3-Pin TO-220 STP45N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP45N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 78mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 210W |
| Typical Gate Charge Qg @ Vgs | 82nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Offers low on-state losses per silicon area ensuring efficient power management.
- Features a typical gate charge of 82 nC supporting fast switching response.
- Designed for high-power PFC and PWM applications including solar converters and power supplies.
- Supports a maximum power dissipation of 210 W for reliable thermal performance.
- Operates under a wide temperature range from -55°C to 150°C for industrial use.
- Includes a maximum drain-source resistance of 78 mΩ ensuring high conductivity.
- Enhanced hard switching capability for compact and energy-conscious designs.
- Through-hole mounting with a 3-pin configuration for easy integration.
Product Description
STMicroelectronics STP45N65M5 is an N-channel MDmesh™ M5 series MOSFET engineered for high efficiency and reliability in power switching applications. Rated for a continuous drain current of 35 A and a drain-source voltage of 710 V, this device is built to withstand demanding load conditions.
The 3-pin TO-220 package supports through-hole mounting enabling robust mechanical and electrical connections. This enhancement mode MOSFET optimizes power factor correction (PFC) and pulse width modulation (PWM) topologies typical in solar power converters, consumer power supplies, and electronic lighting control systems.
Featuring low gate charge of 82 nC and a maximum power dissipation of 210 W, it achieves reduced switching losses and effective heat management. The device operates reliably over a broad temperature range from -55°C to 150°C, making it suitable for harsh industrial environments.
High continuous drain current capacity of 35 A for robust power handling. Maximum drain-source voltage rating of 710 V for high-voltage applications. Low on-state resistance of 78 mΩ for energy-efficient conduction. Enhancement mode channel optimized for hard switching applications.
Compact 3-pin TO-220 through-hole package for easy implementation. Wide operating temperature supports harsh operating conditions. Typical forward voltage drop of 1.5 V ensures efficient operation. Maximum gate-source voltage of ±25 V protects gate integrity.
Industrially, this MOSFET is an excellent choice for electronic components requiring energy-efficient, compact, and high-performance discrete semiconductor solutions. Explore additional electronic components and semiconductor devices at EnvMart for your power management projects.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 A.
This MOSFET has a maximum drain-source voltage rating of 710 V.
The typical gate charge for this model is 82 nC.
It supports a maximum power dissipation of 210 W.
The maximum drain-source resistance is 78 mΩ, ensuring high conductivity.
It operates reliably over a temperature range from -55°C to 150°C.
This model comes in a TO-220 package type, which supports through-hole mounting.
This MOSFET has a 3-pin configuration.
It is an N-channel MOSFET, designed for enhancement mode operation.
It is designed for high-power PFC and PWM applications, including solar converters and power supplies.
The typical forward voltage drop is 1.5 V.
The maximum gate-source voltage is ±25 V, which helps protect gate integrity.
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