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STMicroelectronics MDmesh M2 N-Channel MOSFET, 7.5A, 650V Enhancement Mode, 3-Pin TO-220 STF10N60M2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF10N60M2 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 13.5nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Enhanced channel mode ideal for efficient power control applications.
- Maximum power dissipation of 25W ensures reliable operation under load.
- Low typical gate charge of 13.5nC reduces switching losses.
- Wide operating temperature range from -55°C to 150°C for various industrial environments.
- 3-pin TO-220 through-hole package provides easy mounting and heat dissipation.
- Maximum drain-source resistance of 600mΩ ensures low conduction losses.
- Designed for resonant-type switching supplies and LLC converters.
Product Description
STMicroelectronics STF10N60M2 is a robust MDmesh M2 Series N-Channel MOSFET suitable for industrial and commercial power electronics requiring high voltage and current control. This enhancement mode Power MOSFET supports a maximum continuous drain current of 7.5A and a drain-source voltage of 650V, housed in a 3-pin TO-220 through-hole package that provides excellent thermal management and reliability.
The device features a low gate charge of 13.5nC at Vgs, minimizing switching losses and optimizing efficiency in resonant-type switching supplies, including LLC converters. It also offers a maximum power dissipation rating of 25W and a low drain-source resistance of 600mΩ to ensure minimal conduction losses during operation.
Operating over a wide temperature range from -55°C to 150°C, the STF10N60M2 is suitable for harsh industrial environments. Its compact dimensions (Height: 16.4mm, Width: 4.6mm, Length: 10.4mm) and through-hole mounting make it easy to integrate into various power supply and motor control applications.
Enhanced channel mode for efficient switching control. Low gate charge for reduced switching losses. High voltage and current ratings suitable for power electronics. Robust TO-220 package for effective heat dissipation. Wide operating temperature for versatile industrial use.
Ideal for resonant switching supplies and LLC converters.
This MOSFET is typically used in industrial electronics, power conversion, motor drives, and other high-efficiency power management systems. Its superior electrical characteristics from the MDmesh M2 series by STMicroelectronics ensure reliability and performance in demanding applications.
Explore similar MOSFET components for your power electronics projects at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.5A.
It supports a maximum drain-source voltage of 650V.
The typical gate charge at Vgs is 13.5nC, which helps in minimizing switching losses.
This model is housed in a TO-220 through-hole package, which facilitates easy mounting and heat dissipation.
The maximum power dissipation rating is 25W, ensuring reliable operation under load.
The dimensions are as follows: Height 16.4mm, Width 4.6mm, and Length 10.4mm.
The maximum drain-source resistance is 600mΩ, which ensures low conduction losses.
It operates over a wide temperature range from -55°C to 150°C, suitable for various industrial environments.
This model features an enhancement mode N-channel configuration.
It is suitable for industrial electronics, power conversion, motor drives, and high-efficiency power management systems.
The maximum gate-source voltage is -25V to +25V.
This MOSFET belongs to the MDmesh M2 series by STMicroelectronics.
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