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STMicroelectronics MDmesh M5 N-Channel MOSFET 130 A, 710 V Enhancement, 3-Pin Max247 STY139N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | STY139N65M5 |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | Max247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 130A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 17mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 625W |
| Typical Gate Charge Qg @ Vgs | 363nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Optimized for high-power power factor correction and PWM topologies.
- Features low on-state losses and low gate charge for energy-efficient operation.
- Designed for compact, reliable hard switching applications.
- Typical applications include solar power converters and electronic lighting controls.
- Operating temperature range from -55°C to 150°C ensures robust performance.
- Through-hole mount with a pin count of 3 enhances ease of integration.
- Maximum power dissipation of 625 W supports demanding power requirements.
- Gate-source voltage tolerance is ±25 V, suitable for various control circuits.
Product Description
The STMicroelectronics STY139N65M5 MDmesh M5 Series is a high-performance N-channel MOSFET designed for demanding industrial and electronic power applications. This device supports a continuous drain current of 130 A with a maximum drain-source voltage of 710 V. Packaged in a 3-pin Max247 through-hole configuration, it facilitates easy integration in power circuits requiring efficient thermal management and reliability.
This MOSFET is optimized for use in high-power power factor correction (PFC) and pulse-width modulation (PWM) topologies, combining low on-state resistance to reduce conduction losses with a low gate charge that minimizes switching energy losses. The device is suitable for energy-conscious designs, enabling compact and reliable hard switching applications.
Typical use cases include solar power converters, power supplies for consumer electronics, and electronic lighting control systems, where energy efficiency and durability are critical. The wide operating temperature range from -55°C to 150°C ensures stable operation under varied environmental conditions.
Key physical dimensions include a length of 15.9 mm, width of 5.3 mm, and height of 20.3 mm, making it compatible with standard electronic mounting solutions. The maximum power dissipation rating of 625 W allows it to handle significant power loads without degradation.
Optimized for high-efficiency power factor correction and PWM switching. Low gate charge and on-state resistance reduce power losses. Robust operation over a wide temperature range from -55°C to 150°C. 3-pin Max247 package ensures ease of handling and installation.
High maximum power dissipation of 625 W supports demanding applications. Designed for use in solar power inverters and electronic lighting controls. Manufactured to exacting quality standards and sourced from China. Explore STMicroelectronics products and similar Power MOSFETs in the Electronics & Electricals category at EnvMart for advanced power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 130 A.
This MOSFET has a maximum drain-source voltage rating of 710 V.
The maximum power dissipation for this unit is 625 W.
The dimensions are 15.9 mm in length, 5.3 mm in width, and 20.3 mm in height.
It operates within a temperature range of -55°C to 150°C.
This MOSFET uses a through-hole mounting type with a 3-pin configuration.
The typical gate charge is 363 nC at Vgs.
The maximum gate-source voltage tolerance is ±25 V.
This model belongs to the MDmesh M5 series.
It is optimized for high-power power factor correction and PWM topologies, suitable for applications like solar power converters and electronic lighting controls.
The channel type of this device is N-channel enhancement.
The maximum drain-source resistance is 17 mΩ.
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