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STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW45N65M5 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 78mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 210W |
| Typical Gate Charge Qg @ Vgs | 82nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed for energy-conscious and compact hard switching applications.
- Low on-state resistance to minimize power loss.
- Supports maximum power dissipation of 210 W.
- Encased in a 3-pin TO-247 package for reliable through-hole mounting.
- Operates at a maximum temperature of 150°C for high durability.
- Typical gate charge of 82 nC ensures efficient switching performance.
- Maximum drain-source resistance of 78 milliohms reduces conduction losses.
- Suitable for solar power converters, PWM power supplies, and electronic lighting controls.
Product Description
STMicroelectronics STW45N65M5 is a high-performance N-channel MDmesh™ M5 Series MOSFET designed for demanding power switching applications. It supports a maximum continuous drain current of 35 A and a drain-source voltage of 710 V, making it ideal for power factor correction (PFC), pulse-width modulation (PWM) topologies, and energy-efficient designs.
This transistor uses enhancement mode technology and comes in a durable 3-pin TO-247 package for reliable through-hole mounting. It exhibits low on-state resistance (Rds(on)) of 78 milliohms and a gate charge of about 82 nC to optimize efficiency and reduce switching losses.
The device can dissipate up to 210 watts of power and operates safely in temperatures ranging from -55°C to 150°C, suitable for robust industrial and electronic environments. It features a forward voltage drop of 1.5 V and gate-source voltage tolerance from -25 V to +25 V.
Its compact dimensions (20.15 mm height, 15.75 mm length, and 5.15 mm width) enable integration in various electronic assemblies. It is manufactured in China. Key applications include solar power converters, electronic lighting controls, and other power supply equipment where efficient and reliable transistor switching is critical.
Designed with low on-resistance for efficient power switching. High maximum current and voltage rating for heavy-duty use. Robust thermal tolerance for industrial environments. Compact TO-247 package for easy mounting. Suitable for renewable energy and consumer power products.
Explore the Electronics & Electricals catalog at EnvMart for more STMicroelectronics MOSFETs and semiconductor devices optimized for your industrial and electronic design needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 A.
It has a maximum drain-source voltage rating of 710 V.
The maximum drain-source resistance (Rds(on)) is 78 milliohms.
The dimensions of the TO-247 package are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The typical gate charge for this model is about 82 nC.
This device supports a maximum power dissipation of 210 W.
The maximum operating temperature is 150°C.
It is suitable for applications such as solar power converters, PWM power supplies, and electronic lighting controls.
The minimum operating temperature is -55°C.
The forward voltage drop is 1.5 V.
This model is designed for through-hole mounting.
The gate-source voltage tolerance ranges from -25 V to +25 V.
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