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STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V Enhancement Mode, 3-Pin TO-263 STB45N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB45N65M5 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 78mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 210W |
| Typical Gate Charge Qg @ Vgs | 82nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET utilizes MDmesh M5 technology to deliver low on-state losses and reduced gate charge.
- It features an enhancement mode with a TO-263 surface mount package and 3 pins.
- The device supports a maximum power dissipation of 210 W and a maximum gate-source voltage range of -25 to +25 V.
- It operates reliably within a temperature range from -55°C to 150°C.
- The low forward voltage of 1.5 V enables efficient operation in power supplies and solar power converters.
- Compact dimensions of 10.4 mm length, 9.35 mm width, and 4.6 mm height support space-saving PCB designs.
- No automotive certification is claimed for this product.
- Manufactured in China with robust specifications for industrial and commercial electronic applications.
Product Description
STMicroelectronics STB45N65M5 MDmesh M5 N-Channel MOSFET is designed for efficient and reliable power switching in high-power PFC and PWM circuits. Featuring a maximum continuous drain current of 35 A and a high voltage rating of 710 V, this MOSFET supports demanding applications such as solar power inverters, consumer electronic power supplies, and electronic lighting controls.
Built using the MDmesh M5 technology, the device offers low on-state losses and minimal gate charge, ensuring energy-conscious operation. The enhancement mode transistor is housed in a compact TO-263 package with 3 pins, suitable for surface mounting on PCBs.
This MOSFET can handle a maximum power dissipation of 210 W, with gate-source voltage tolerances of -25 V to +25 V and a typical gate charge of 82 nC at Vgs. It operates across a wide temperature spectrum from -55°C to 150°C ensuring durability in industrial environments.
Its compact form factor with dimensions of 10.4 mm length, 9.35 mm width, and 4.6 mm height facilitates dense PCB layouts. The forward voltage of 1.5 V further enhances its efficiency in power conversion applications.
Optimized for high-efficiency PWM and PFC topologies. Low on-state resistance and gate charge reduce switching losses. Enhanced reliability with wide temperature tolerance. Compact TO-263 surface mount package. Suitable for solar inverters, power supplies, and electronic lighting.
STMicroelectronics products deliver quality and performance for industrial, laboratory, and commercial electronics manufacturing. Explore the Electronics & Electricals category on EnvMart for more discrete semiconductor solutions and advanced power components.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 A.
This MOSFET has a maximum drain-source voltage rating of 710 V.
It can handle a maximum power dissipation of 210 W.
The dimensions of the TO-263 package are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
It operates reliably within a temperature range from -55°C to 150°C.
This model supports surface mounting with a TO-263 package.
The typical gate charge at Vgs is 82 nC.
The forward voltage of this device is 1.5 V.
The maximum gate-source voltage range is -25 V to +25 V.
This device features an N-channel configuration.
It is suitable for applications such as solar power inverters, consumer electronic power supplies, and electronic lighting controls.
This model is manufactured in China.
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