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onsemi P-Channel MOSFET, 20 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode, Surface NTTFS5116PLTAG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 3.15mm |
| Model | NTTFS5116PLTAG |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | NTTFS5116PL |
| Maximum Operating Temperature | 175°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 72mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The MOSFET operates in enhancement mode, suitable for power switching applications.
- Maximum drain-source resistance (Rds) is 72 milliohms ensuring efficient conduction.
- It supports a maximum power dissipation of 40 watts for thermal management.
- The device has a typical gate charge of 25 nanoCoulombs at a gate-source voltage of 5 V.
- Operates safely within a temperature range from -55°C to 175°C.
- The package dimensions are compact with a length and width of 3.15 mm each and a height of 750 micrometres.
- Designed for surface mount technology, enhancing PCB design flexibility.
- Rated maximum gate-source voltage range is ±20 volts.
Product Description
The onsemi NTTFS5116PLTAG is a high-performance Type P Channel MOSFET designed for power and electronic applications requiring effective switching and power management.
This MOSFET supports a continuous drain current rating of 20 amps and a maximum drain-source voltage of 60 volts, making it suitable for a variety of electronic circuits focused on power efficiency and reliability.
Featuring an 8-Pin WDFN package, the device is surface mountable, enhancing assembly and layout compactness in PCB designs. Its enhancement mode channel and a low drain-source resistance of 72 milliohms offer low power loss and improved efficiency.
The component dissipates up to 40 watts of power with a thermal design to operate safely from -55 degrees Celsius to 175 degrees Celsius, suitable for demanding industrial environments.
The typical gate charge of 25 nanoCoulombs at 5 volts ensures fast switching capabilities, ideal for dynamic power control. Its dimensions, measuring 3.15 mm in width and length, along with a height of 750 microns, provide a compact footprint.
Applications for this device include industrial power management, consumer electronics, and automotive electronics (not automotive certified). Its broad operating temperature range and reliability benchmarks serve well in laboratory, manufacturing, and commercial sectors.
The MOSFET operates in enhancement mode for efficient power switching. Maximum continuous drain current of 20 A supports high load currents. Low Rds(on) of 72 mΩ reduces conduction losses. Compact 8-Pin WDFN surface-mount package enhances PCB integration.
Thermal rating supports operation up to 175°C. Wide gate voltage range of ±20 V enables robust control. Typical gate charge of 25 nC allows fast switching. Dimensions of 3.15 mm x 3.15 mm x 0.75 mm give a small form factor.
Explore more semiconductors and MOSFET components in the Electronics & Electricals category on EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
It can handle a maximum drain-source voltage of 60 V.
The typical gate charge at a gate-source voltage of 5 V is 25 nC.
The maximum drain-source resistance (Rds) is 72 milliohms.
It operates safely within a temperature range from -55°C to 175°C.
The package dimensions are 3.15 mm in length and width, with a height of 750 micrometres.
This model is designed for surface mount technology.
The device supports a maximum power dissipation of 40 watts.
It has a total of 8 pins.
The channel type is P Channel, operating in enhancement mode.
The rated maximum gate-source voltage range is ±20 volts.
The country of origin for this model is India.
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