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onsemi N-Channel MOSFET, 560 mA, 30 V Enhancement Mode, 3-Pin SOT-23 Package NTR4003NT3G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model NTR4003NT3G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 560mA
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 690mW
Typical Gate Charge Qg @ Vgs 1.15nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 700mV

Key Features

  • Enhancement mode operation ensures efficient switching performance.
  • Maximum continuous drain current of 560 mA supports moderate power loads.
  • Surface mount SOT-23 package with 3 pins suitable for compact PCB designs.
  • Maximum drain-source resistance of 2 Ohms minimizes conduction losses.
  • Typical gate charge of 1.15 nC supports fast switching applications.
  • Operating temperature range from -55°C to 150°C for reliable industrial use.
  • Complies with automotive standard AEC-Q101 ensuring high reliability.

Product Description

onsemi NTR4003NT3G is an N-Channel Enhancement Mode MOSFET designed for efficient switching in electronic circuits. With a continuous drain current rating of 560 mA and a maximum drain-source voltage of 30 V, it is ideal for power-sensitive applications requiring a compact footprint.

This MOSFET comes in a 3-pin SOT-23 surface-mount package, measuring 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, making it suitable for densely packed printed circuit boards in automotive, industrial, and consumer electronics.

The device features a maximum drain-source resistance of 2 Ohms, reducing power loss during conduction. Its typical gate charge of 1.15 nC facilitates fast switching speeds, improving efficiency in switching circuits.

It operates reliably across a wide temperature range from -55°C to 150°C, suitable for harsh environmental conditions. Compliance with the AEC-Q101 automotive standard ensures the MOSFET meets stringent quality and reliability requirements for automotive applications.

Enhancement mode operation for efficient switching. 560 mA continuous drain current handling capability. Compact 3-pin SOT-23 surface-mount package. Low maximum drain-source resistance of 2 Ohms. Fast switching enabled by low gate charge.

Wide operating temperature range from -55°C to 150°C. Meets AEC-Q101 automotive reliability standards. Small dimensions suitable for dense PCB layouts.

This product is widely used in industrial controls, automotive electronics, power management systems, and consumer devices requiring efficient and reliable MOSFET switching components. It supports design engineers focused on power efficiency and miniaturization.

Explore more on semi-conductors and components on EnvMart for comprehensive procurement options tailored to advanced electronic and industrial applications.

onsemi N-Channel MOSFET, 560 mA, 30 V Enhancement Mode, 3-Pin SOT-23 Package NTR4003NT3G
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Frequently Asked Questions

The maximum continuous drain current for the NTR4003NT3G is 560 mA.

This MOSFET has a maximum drain-source voltage of 30 V.

The NTR4003NT3G comes in a 3-pin SOT-23 surface-mount package.

The typical gate charge for the NTR4003NT3G is 1.15 nC.

It operates reliably within a temperature range of -55°C to 150°C.

The maximum drain-source resistance is 2 Ohms, which minimizes conduction losses.

Yes, it complies with the AEC-Q101 automotive standard, ensuring high reliability.

This MOSFET is widely used in industrial controls, automotive electronics, and power management systems.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

The maximum power dissipation for the NTR4003NT3G is 690 mW.

The maximum gate-source voltage is -20V to +20V.

It has an N-channel type, designed for enhancement mode operation.

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