onsemi Type P-Channel Power MOSFET 3.5 A 30 V Enhancement 3-Pin SOT-23 NTR4171PT1G

onsemi NTR4171PT1G is a Type P-Channel Power MOSFET designed for surface mount applications in electronics, electrical systems, and power management circuits. It comes in a 3-Pin SOT-23 package, offering a compact form factor suitable for high-density PCB layouts.

This MOSFET supports a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 30 V, making it suitable for low to medium power switching and amplification tasks. The device operates with enhancement mode channel behavior and provides low on-resistance of 150 milliohms, ensuring minimal power losses and high efficiency.

It is capable of dissipating up to 1.25 W power and functions within an operating temperature range of -55°C to 150°C, suitable for demanding industrial, consumer electronics, and embedded system environments.

The typical gate charge of 15.6 nC supports rapid switching performance, while the maximum gate-source voltage range of -12 V to +12 V allows robust gate control without risk of damage.

The MOSFET dimensions are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height. The forward voltage drop of -1.2 V defines its conduction characteristics under load. Although it is not qualified to automotive industry standards, its features are well suited for laboratory, manufacturing, HVAC power controls, and other commercial electronics applications.

With its reliable surface mount design and practical electrical characteristics, the onsemi NTR4171PT1G MOSFET is ideal for designing advanced power electronic circuits requiring efficient switching and reliable operation.

This MOSFET features an enhancement mode channel for efficient switching performance. Maximum drain-source resistance (Rds) is 150 milliohms ensuring low conduction losses. It supports a maximum power dissipation of 1.25 W for reliable operation.

Operating temperature range is wide from -55°C to 150°C suitable for various industrial applications. The device includes a typical gate charge of 15.6 nanocoulombs aiding in fast switching. Maximum gate-source voltage ranges from -12 V to +12 V for flexible gate drive levels.

Its compact dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height facilitate PCB space efficiency. The package type is the popular industry-standard SOT-23 for surface mount PCB assembly. Forward voltage is rated at -1.2 V ensuring controlled conduction behavior.

The transistor is not certified to automotive standards but is ideal for power management circuits, switches, and amplifiers. Explore more Power MOSFETs and semiconductor components in EnvMart's Electronics & Electricals category for enhanced industrial and commercial design solutions.