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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 3.1mm |
| Model | NTHD4102PT1G |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | ChipFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.1A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 7.6nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.8V |
| Transistor Configuration | Isolated |
onsemi NTHD4102PT1G is an isolated dual P-channel power MOSFET designed for low-voltage switching and amplification applications. It supports a maximum continuous drain current of 4.1 A and a maximum drain-source voltage of 20 V, making it ideal for performance-critical industrial and electronic circuits.
This enhancement-mode MOSFET is implemented in a compact 8-pin ChipFET surface-mount package to facilitate efficient PCB integration while minimizing board space usage. With a maximum power dissipation rating of 2.1 W and a typical gate charge value of 7.6 nC, the device enables fast switching and thermal management suited for industrial, commercial, and automotive electronics.
Its operating temperature range from -55°C to +150°C allows reliable operation in harsh environmental conditions. The dual transistor chip contains two isolated P-channel MOSFETs, providing flexibility for various circuit topologies requiring dual switches or amplifiers.
Designed for integration into power management, switching, and control circuits, the NTHD4102PT1G supports a gate-source voltage range of -8 V to +8 V and features a low on-state resistance of 170 mΩ to reduce conduction losses and improve efficiency.
Maximum continuous drain current of 4.1 A ensures strong load driving capability. Supports gate drive voltages up to ±8 V for versatile driver compatibility. Compact ChipFET 8-pin package for space-constrained applications.
Robust temperature tolerance from -55°C up to +150°C for reliable operation. Low typical gate charge of 7.6 nC supports fast switching speeds. Maximum power dissipation of 2.1 W aids in effective thermal management. Isolated transistor configuration enables flexible dual-switching circuits.
Physical dimensions of 3.1 mm length, 1.7 mm width, and 1.1 mm height facilitate PCB layout design.
This Power MOSFET finds application in industrial automation, power supply controls, motor drivers, and other electronic systems requiring efficient P-channel switching devices. onsemi provides robust and quality-controlled MOSFETs catering to demanding semiconductor applications.
Explore EnvMart's extensive catalog for onsemi power semiconductors and related components to meet your design and manufacturing needs.
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