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onsemi Isolated 2 Type P-Channel Power MOSFET, 4.1 A, 20 V Enhancement, 8-Pin ChipFET NTHD4102PT1G

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 3.1mm
Model NTHD4102PT1G
Width 1.7mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type ChipFET
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type Type P
Maximum Continuous Drain Current Id 4.1A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 170mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 7.6nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -0.8V
Transistor Configuration Isolated

Key Features

  • Maximum continuous drain current of 4.1 amperes ensuring reliable current handling.
  • Drain-source voltage rating of 20 volts suitable for low-voltage applications.
  • Enhancement mode channel type with isolated dual P-channel transistors.
  • Compact 8-pin ChipFET surface mount package for space-saving PCB layouts.
  • Maximum power dissipation of 2.1 watts for thermal reliability under load.
  • Wide operating temperature range from -55°C to +150°C for industrial environments.
  • Typical gate charge measured at 7.6 nanocoulombs for fast switching performance.
  • Low maximum drain-source resistance of 170 milliohms to minimize losses.

Product Description

onsemi NTHD4102PT1G is an isolated dual P-channel power MOSFET designed for low-voltage switching and amplification applications. It supports a maximum continuous drain current of 4.1 A and a maximum drain-source voltage of 20 V, making it ideal for performance-critical industrial and electronic circuits.

This enhancement-mode MOSFET is implemented in a compact 8-pin ChipFET surface-mount package to facilitate efficient PCB integration while minimizing board space usage. With a maximum power dissipation rating of 2.1 W and a typical gate charge value of 7.6 nC, the device enables fast switching and thermal management suited for industrial, commercial, and automotive electronics.

Its operating temperature range from -55°C to +150°C allows reliable operation in harsh environmental conditions. The dual transistor chip contains two isolated P-channel MOSFETs, providing flexibility for various circuit topologies requiring dual switches or amplifiers.

Designed for integration into power management, switching, and control circuits, the NTHD4102PT1G supports a gate-source voltage range of -8 V to +8 V and features a low on-state resistance of 170 mΩ to reduce conduction losses and improve efficiency.

Maximum continuous drain current of 4.1 A ensures strong load driving capability. Supports gate drive voltages up to ±8 V for versatile driver compatibility. Compact ChipFET 8-pin package for space-constrained applications.

Robust temperature tolerance from -55°C up to +150°C for reliable operation. Low typical gate charge of 7.6 nC supports fast switching speeds. Maximum power dissipation of 2.1 W aids in effective thermal management. Isolated transistor configuration enables flexible dual-switching circuits.

Physical dimensions of 3.1 mm length, 1.7 mm width, and 1.1 mm height facilitate PCB layout design.

This Power MOSFET finds application in industrial automation, power supply controls, motor drivers, and other electronic systems requiring efficient P-channel switching devices. onsemi provides robust and quality-controlled MOSFETs catering to demanding semiconductor applications.

Explore EnvMart's extensive catalog for onsemi power semiconductors and related components to meet your design and manufacturing needs.

onsemi Isolated 2 Type P-Channel Power MOSFET, 4.1 A, 20 V Enhancement, 8-Pin ChipFET NTHD4102PT1G
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Frequently Asked Questions

The maximum continuous drain current is 4.1 A, ensuring reliable current handling for various applications.

It has a maximum drain-source voltage rating of 20 V, suitable for low-voltage applications.

The typical gate charge is measured at 7.6 nanocoulombs, which supports fast switching performance.

The dimensions are 3.1 mm in length, 1.7 mm in width, and 1.1 mm in height, facilitating efficient PCB layout design.

The maximum power dissipation is rated at 2.1 watts, aiding in effective thermal management under load.

It operates within a temperature range of -55°C to +150°C, suitable for industrial environments.

The MOSFET is housed in a compact 8-pin ChipFET surface mount package, designed for space-saving PCB layouts.

The maximum gate-source voltage is ±8 V, allowing for versatile driver compatibility.

This model contains two isolated P-channel MOSFETs per chip, providing flexibility for various circuit configurations.

It features a Type P channel, which is an enhancement mode channel type.

The maximum drain-source resistance is 170 milliohms, which helps minimize conduction losses.

It is suitable for applications in industrial automation, power supply controls, and motor drivers, among others.

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