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Infineon StrongIRFET N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-220 IRFB7430PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | IRFB7430PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | StrongIRFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 195A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 460nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 860mV |
Key Features
- This MOSFET supports a continuous drain current of 195 amperes.
- It operates at a maximum drain-source voltage of 40 volts.
- The package type is a 3-pin TO-220 through-hole mount.
- It features an enhancement-type channel mode suitable for robust switching.
- Maximum power dissipation rating is 375 watts for high efficiency.
- The device has a maximum drain-source resistance of 1.3 milliohms.
- Operating temperature ranges from -55°C to 175°C.
- Typical gate charge at Vgs is 460 nanoCoulombs.
Product Description
Infineon IRFB7430PBF StrongIRFET N-Channel MOSFET is a power semiconductor designed for enhanced performance and robustness in industrial low frequency applications such as motor drives, power tools, inverters, and battery management systems.
This device operates at a maximum continuous drain current of 195 A and supports a drain-source voltage up to 40 V, delivered in a compact 3-pin TO-220 through hole package measuring 16.51 mm in height, 10.67 mm in length, and 4.83 mm in width.
Its low RDS(on) of 1.3 milliohms ensures high efficiency with reduced conduction losses. The enhancement type channel mode allows for reliable switching performance and improved gate, avalanche, and dynamic dv/dt ruggedness.
The MOSFET sustains maximum power dissipation of 375 W and functions reliably in harsh environments with operating temperatures ranging from -55°C to 175°C. Typical gate charge at Vgs is 460 nC, and the maximum gate-source voltage is rated from -20 V to +20 V, offering operational flexibility.
These features make the IRFB7430PBF ideal for industrial manufacturing, laboratory, construction, HVAC, and other commercial applications requiring efficient power control and high current handling.
This MOSFET supports a continuous drain current of 195 amperes. Maximum drain-source voltage rating of 40 volts ensures safe operation. Compact TO-220 package allows easy through-hole mounting. Low RDS(on) of 1.3 milliohms guarantees energy efficiency.
Wide operating temperature range facilitates use in demanding environments. High power dissipation rating of 375 watts supports heavy load applications. Reliable gate drive with typical charge of 460 nanoCoulombs. Robust enhancement mode channel for stable switching.
Max gate-source voltage of ±20 volts for device protection. Forward voltage drop of 860 mV minimizes losses during conduction. Explore more power MOSFET components at EnvMart for your industrial and electronic applications.
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Frequently Asked Questions
The IRFB7430PBF supports a maximum continuous drain current of 195 amperes.
It has a maximum drain-source voltage rating of 40 volts, ensuring safe operation in various applications.
This model comes in a 3-pin TO-220 through-hole package, which facilitates easy mounting.
The maximum power dissipation rating is 375 watts, supporting heavy load applications.
The maximum drain-source resistance (RDS(on)) is 1.3 milliohms, which contributes to its energy efficiency.
The typical gate charge at Vgs is 460 nanoCoulombs.
It operates reliably within a temperature range of -55°C to 175°C, making it suitable for harsh environments.
The maximum gate-source voltage is rated from -20 V to +20 V, providing operational flexibility.
The dimensions of the TO-220 package are 16.51 mm in height, 10.67 mm in length, and 4.83 mm in width.
This MOSFET features an N-channel type, suitable for enhancement mode applications.
It is designed for industrial low frequency applications such as motor drives, power tools, inverters, and battery management systems.
The country of origin for this MOSFET is India.
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