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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3.1mm |
| Model | NUP4302MR6T1G |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | NUP4302MR6 |
| Maximum Operating Temperature | 125°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Maximum Continuous Forward Current If | 200mA |
| Peak Reverse Repetitive Voltage Vrrm | 30V |
| Diode Configuration | Array |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 100μA |
| Maximum Forward Voltage Vf | 1V |
| Peak Reverse Recovery Time trr | 5ns |
onsemi NUP4302MR6T1G is a high-performance switching diode array designed for surface mount applications in electronic circuits. It supports a continuous forward current of 200 mA and withstands peak reverse repetitive voltages up to 30 V, making it ideal for rectification and transient voltage suppression in low power electronic designs.
Housed in a compact 6-pin TSOP package with dimensions of 3.1 mm in length, 1.7 mm in width, and 1 mm in height, this device offers efficient board space utilization and ease of assembly in surface mounting processes.
The diode features a maximum forward voltage of 1 V which ensures minimal power dissipation and high efficiency. Its operation range spans a minimum temperature of -55°C up to a maximum of 125°C, suitable for industrial and commercial electronics requiring robust thermal performance.
The peak reverse current is limited to 100 μA, minimizing leakage current and enhancing reliability. With a peak reverse recovery time of 5 nanoseconds, the diode supports fast switching speeds critical in switching regulator circuits and other discrete semiconductor use cases.
This switching diode array finds broad applicability in industrial automation, power management circuits, automotive electronics (non-automotive grade), and general electronic device manufacturing where compact, reliable diode arrays are required.
Features six pins in a TSOP package for surface mounting. Supports a continuous forward current of 200 mA. Peak reverse repetitive voltage is 30 V. Maximum forward voltage is 1 V ensuring low power loss. Operates reliably in temperatures ranging from -55°C to 125°C.
Peak reverse current specification of 100 μA for minimal leakage. Reverse recovery time of only 5 nanoseconds for fast switching. Compact dimensions of 3.1 mm length, 1.7 mm width, and 1 mm height. Designed specifically as a switching diode array for discrete semiconductor applications.
Choose onsemi for trusted semiconductor switching diode arrays ensuring high performance and low power dissipation. Browse our Electronics & Electricals category for more semiconductors and diode arrays to support your manufacturing and repair needs.
Explore more products in our Schottky Diodes & Rectifiers category.
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