DiodesZetex NPN Transistor 2 A, 12 V, 350 mW Power Dissipation, 3-Pin SOT-23 Package ZXTN25012EFLTA

DiodesZetex ZXTN25012EFLTA is a robust general purpose NPN bipolar transistor featuring a maximum DC collector current of 2 A and a maximum collector-emitter voltage of 12 V. Encapsulated in a compact 3-pin SOT-23 surface mount package, it offers efficient performance with a maximum power dissipation rating of 350 milliwatts. This transistor is designed with a minimum DC current gain (hFE) of 500, making it well-suited for amplification tasks in diverse electronic circuits.

Its wide operating temperature range from -55°C to 150°C enables deployment in various industrial, electronics manufacturing, and commercial applications. The device supports a maximum transition frequency of 260 MHz, providing excellent high-frequency performance for switching and signal processing.

With a physical footprint of 3.04 mm in length, 1.4 mm in width, and 1.1 mm in height, this transistor is optimized for space-constrained PCB designs. It has a single transistor configuration and NPN polarity with a 3-pin count. The maximum collector-base voltage is rated at 20 V, and the maximum emitter-base voltage is 7 V, ensuring reliable operation within specified voltage limits.

Although this product does not comply with automotive standards, it finds extensive application in industrial electronics, power management circuits, signal amplification, and general electronic device assembly. Made in China, it meets quality standards for a broad range of uses.

Surface mount device enhances manufacturing efficiency. High gain improves amplification quality. Wide temperature range ensures durability. Compact dimensions fit modern PCBs. Reliable performance within voltage ratings.

Suitable for high-frequency switching applications. 3-pin SOT-23 packaging for compactness. Explore further high-quality Bipolar Transistors and semiconductor components at EnvMart for your industrial and electronic design needs.