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onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement Mode, 4-Pin SOT-223 NDT456P

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onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement Mode, 4-Pin SOT-223 NDT456P

Name: onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement Mode, 4-Pin SOT-223 NDT456P
Brand: onsemi
SKU: 365083
Price: 1.14 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.7mm
Length	6.7mm
Model	NDT456P
Width	3.7mm
Mount Type	Surface
Series	NDT
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-65°C
Pin Count	4
Channel Type	Type P
Maximum Continuous Drain Current Id	7.5A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	54mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3W
Typical Gate Charge Qg @ Vgs	47nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

This P-Channel MOSFET operates in enhancement mode.
It features a maximum continuous drain current of 7.5 A and maximum drain-source voltage of 30 V.
Maximum power dissipation is 3 W, suitable for compact board integration.
The device is built with DMOS technology for low on-resistance and reliable switching.
It supports a maximum operating temperature up to 150°C for high durability.
Typical gate charge at Vgs is 47 nC, enabling efficient gate control.
Can be used for load switching, power management, DC motor control, and battery protection.
The device is surface mount type with 4 pins in a standard SOT-223 form factor.

Product Description

onsemi NDT456P is a Type P-Channel Enhancement Mode MOSFET designed for applications requiring robust and reliable switching performance with a continuous drain current of 7.5 A and a drain-source voltage of 30 V. Packaged in a compact 4-pin SOT-223 surface mount case, this device integrates ON Semiconductor's proprietary high-density DMOS technology, providing minimal on-state resistance for efficient power handling.

This MOSFET is ideal for industrial and commercial electronics including load switching, DC/DC converters, battery protection circuits, DC motor control, and power management controls. Its high saturation current and superior switching characteristics ensure dependable operation in demanding environments.

Key electrical characteristics include a maximum power dissipation of 3 W, typical gate charge of 47 nC at gate-source voltage, and operating temperature ranges from -65°C to 150°C. The device dimensions are 6.7 mm in length, 3.7 mm in width, and 1.7 mm in height, suited for compact PCB layouts where space economy is essential.

The NDT456P MOSFET delivers rugged and reliable performance through ON Semiconductor's optimized DMOS process, making it suitable for a broad range of electronics manufacturing and repair applications. The component is new and sourced from India.

This P-Channel MOSFET features enhancement mode operation for voltage-controlled switching. Offers high continuous drain current rating of 7.5 A to support moderate power loads. Compact SOT-223 package type with 4 pins for surface mounting on PCB.

Low on-resistance (Rds) of 54 mΩ ensures energy-efficient switching with minimal heat generation. Wide operating temperature range from -65°C to 150°C for reliable use in diverse environments. Maximum gate-source voltage rating of -20 V to +20 V for versatile gate drive tolerance.

Typical forward voltage is -1.2 V aiding efficient conduction. Compatible with automotive and industrial electronic designs requiring robust MOSFETs. Explore additional MOSFETs and power semiconductors at EnvMart for specialized industrial, laboratory, and commercial electronics use.