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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.62mm |
| Length | 7.11mm |
| Model | ES3J |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214AA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -50°C |
| Pin Count | 2 |
| Maximum Power Dissipation Pd | 1.47W |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 1.7V |
| Peak Reverse Recovery Time trr | 45ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V |
onsemi ES3J Silicon Junction Switching Diode is a high-performance discrete semiconductor designed for surface mount applications. It is configured as a single diode in a DO-214AA package, supporting a maximum forward current of 1 ampere and a peak reverse voltage of 600 volts. The device provides efficient switching capabilities with a peak reverse recovery time of 45 nanoseconds and can endure peak surge currents up to 100 amperes. It supports operation across a wide temperature range from -50°C to 150°C, making it suitable for industrial, electronic, and power control applications.
The diode's compact dimensions of 7.11 mm length, 6.22 mm width, and 2.62 mm height allow for easy integration into printed circuit boards, supporting high-density mounting solutions. Its maximum power dissipation rating of 1.47 watts and maximum forward voltage of 1.7 volts contribute to robust and efficient circuit performance.
This diode is optimized for general-purpose rectification and switching in power supplies, consumer electronics, and industrial equipment. While it does not conform to automotive standards, it is well-suited for industrial control, electronic instrumentation, and power management systems.
The diode features a compact surface mount DO-214AA package for PCB assembly. Supports a maximum forward current of 1 A with a 600 V reverse voltage rating. Fast switching with 45 ns reverse recovery time enhances circuit efficiency.
Wide operational temperature from -50°C to 150°C ensures reliability. Capable of handling surge currents up to 100 A peak non-repetitive forward surge. Maximum power dissipation of 1.47 W contributes to durability under load.
Forward voltage drop of 1.7 V reduces conduction losses in high-frequency circuits. Ideal for industrial electronic applications requiring rugged diode performance. Explore a wide range of semiconductor components and Switching Diodes at EnvMart for your electronic design and manufacturing needs.
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