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onsemi Silicon Junction Switching Diode, Single, 2A Forward Current, 400V Peak Reverse Voltage, DO-214AA Package MURS360T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.13mm |
| Length | 6.86mm |
| Model | MURS360T3G |
| Width | 5.84mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-214AA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 75A |
| Maximum Forward Voltage Vf | 1.28V |
| Peak Reverse Recovery Time trr | 75ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 400V |
| onsemi 600V 3A, Silicon Junction Diode, 2-Pin SMC 2 MURS360Brand | ON Semiconductor |
Key Features
- Features a single diode configuration designed for surface mount applications.
- Supports maximum forward current of 2 amperes for robust performance.
- Peak reverse repetitive voltage rated at 400 volts ensuring high voltage endurance.
- Maximum forward voltage drop of 1.28 volts for efficient conduction.
- Package type DO-214AA with 2 pins facilitating PCB surface mounting.
- Operates in a temperature range from -65°C to 175°C suitable for demanding environments.
- Peak non-repetitive forward surge current rating of 75 amperes for transient conditions.
Product Description
onsemi MURS360T3G silicon junction switching diode is a high-performance single diode designed for surface mount applications. It supports a maximum forward current of 2 A and a peak reverse repetitive voltage of 400 V, housed in a DO-214AA package with 2 pins. This diode is engineered for reliability and efficiency in electronic circuits requiring robust switching characteristics.
The device features a maximum forward voltage of 1.28 V and a peak reverse recovery time of 75 nanoseconds, making it suitable for high-speed switching applications. It supports a wide operating temperature range from -65°C to 175°C, allowing it to function reliably in industrial and electronic environments subjected to temperature extremes.
Physical dimensions include a length of 6.86 mm, width of 5.84 mm, and height of 2.13 mm, allowing compact PCB designs. It also has a peak non-repetitive forward surge current of 75 A, providing durability during transient current events.
This diode is ideal for applications in electronic components, power connectors, semiconductor switching circuits, and other discrete semiconductor uses in industrial, commercial, and manufacturing sectors.
Single diode configuration designed for surface mount technology. 2A maximum forward current rating ensures reliable conduction. 400V peak reverse repetitive voltage supports high voltage tolerance. Low forward voltage drop for efficient power handling.
Compact DO-214AA package with 2 pins suitable for PCB mounting. Wide temperature range from -65°C to 175°C for robust operation. High surge current capacity with 75A peak non-repetitive forward surge. Compact physical dimensions enable space-saving circuit design.
onsemi products are recognized for quality and performance in electronic and electrical applications. Explore more Switching Diodes for diverse electronic component needs at EnvMart.
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Frequently Asked Questions
The MURS360T3G diode supports a maximum forward current of 2 amperes.
It has a peak reverse repetitive voltage rating of 400 volts, ensuring high voltage endurance.
The dimensions of the DO-214AA package are 6.86 mm in length, 5.84 mm in width, and 2.13 mm in height.
This model operates within a temperature range from -65°C to 175°C, making it suitable for demanding environments.
The maximum forward voltage drop for this diode is 1.28 volts, allowing for efficient conduction.
The diode has a peak non-repetitive forward surge current rating of 75 amperes, providing durability during transient conditions.
It is designed for surface mount applications, featuring a compact DO-214AA package with 2 pins.
The peak reverse recovery time for the MURS360T3G is 75 nanoseconds, suitable for high-speed switching applications.
This diode is suitable for applications in electronic components, power connectors, and semiconductor switching circuits.
The diode features a 2-pin configuration, facilitating easy PCB surface mounting.
The sub-type of this diode is Silicon Junction, designed for robust performance in electronic circuits.
The country of origin for this diode is India.
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