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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 1A 600V Enhancement 3-Pin IPAK STD1NK60-1
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD1NK60-1 |
| Width | 6.2mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 8.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- The MOSFET utilizes MDmesh SuperMESH technology for efficient switching performance.
- Maximum power dissipation is 30W ensuring reliable operation under load.
- Features a three-pin IPAK package suitable for through-hole mounting.
- Operating temperature range spans from -55°C to 150°C for industrial applications.
- Maximum drain-source resistance of 8.5Ω minimizes conduction losses.
- Typical gate charge of 7nC supports fast switching speeds.
- Gate withstand voltage ranges from -30V to +30V for robust control.
Product Description
STMicroelectronics STD1NK60-1 is an N-Channel MDmesh SuperMESH MOSFET designed for power electronics applications requiring a maximum continuous drain current of 1A and a drain-source voltage rating of 600V. This transistor operates in enhancement mode and is housed in a compact 3-pin IPAK package suited for through-hole mounting.
With a maximum power dissipation of 30W, it provides stable performance across a wide temperature range from -55°C to 150°C, making it suitable for various industrial, automotive, and commercial electronic devices. The MOSFET's forward voltage is rated at 1.6V, optimizing efficiency in switching power supplies and motor control circuits.
This device incorporates MDmesh SuperMESH technology to improve switching speed and reduce conduction losses. Its typical gate charge of 7nC and maximum gate-source voltage of ±30V ensure excellent gate control and protection. The maximum drain-source resistance of 8.5Ω supports optimal conduction characteristics.
Physical dimensions of 6.6mm in length, 6.2mm in width, and 2.4mm in height make it a compact component for efficient PCB layout. The MOSFET does not carry automotive-specific certifications but meets general semiconductor device standards.
The MOSFET utilizes MDmesh SuperMESH technology for efficient switching performance. Maximum power dissipation is 30W ensuring reliable operation under load. Features a three-pin IPAK package suitable for through-hole mounting.
Operating temperature range spans from -55°C to 150°C for industrial applications. Maximum drain-source resistance of 8.5Ω minimizes conduction losses. Typical gate charge of 7nC supports fast switching speeds. Gate withstand voltage ranges from -30V to +30V for robust control.
Compact dimensions: length 6.6mm, width 6.2mm, height 2.4mm allow easy PCB integration. This MOSFET is ideal for industrial, laboratory, automotive, and electronic manufacturing sectors requiring reliable and efficient power switching components.
Explore EnvMart for more STMicroelectronics semiconductor products and power transistors to meet advanced electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1A.
This MOSFET has a maximum drain-source voltage rating of 600V.
The maximum power dissipation for this unit is 30W.
The typical gate charge for this MOSFET is 7nC.
It operates within a temperature range of -55°C to 150°C.
The dimensions are 6.6mm in length, 6.2mm in width, and 2.4mm in height.
This model is housed in a 3-pin IPAK package suitable for through-hole mounting.
The maximum drain-source resistance is 8.5Ω.
The forward voltage is rated at 1.6V.
The gate withstand voltage ranges from -30V to +30V.
This MOSFET utilizes MDmesh SuperMESH technology for efficient switching performance.
It is suitable for various industrial, automotive, and commercial electronic devices requiring reliable power switching.
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