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STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220 STF26NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF26NM60N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 165mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports maximum continuous drain current of 20 amperes.
- Operates at a maximum drain-source voltage of 600 volts.
- Employs enhancement mode channel type for improved switching.
- Features a TO-220 through-hole mount package with 3 pins.
- Maximum power dissipation is 35 watts, suitable for efficient thermal management.
- Operating temperature range from -55 to 150 degrees Celsius.
- Gate charge typical value of 60 nanoCoulombs at 25 volts gate-source voltage.
- Low maximum drain-source resistance of 165 milliohms ensures minimal conduction losses.
Product Description
STMicroelectronics STF26NM60N is a MDmesh N-Channel MOSFET designed for high efficiency and rugged operation in power electronics applications. This device supports a maximum continuous drain current of 20 A and withstands drain-source voltages up to 600 V. Packaged in a standard 3-pin TO-220 through-hole package, it facilitates ease of mounting and replacement in power circuits.
The MOSFET uses enhancement mode channel technology, providing reliable switching performance for industrial, automotive, and consumer electronic power systems. It dissipates up to 35 watts of power, making it suitable for moderate power switching and amplification tasks.
Designed for operating temperatures from -55°C up to 150°C, this transistor is robust in harsh environments. The typical gate charge is 60 nC at a gate-source voltage of 25 V, allowing efficient gate drive in switching circuits. With a maximum drain-source resistance of 165 milliohms, it delivers low conduction losses to enhance overall system efficiency.
The device supports a maximum gate-source voltage rating of ±25 V and has a forward voltage drop of 1.3 V, offering protection and operational stability. Its compact dimensions - 16.4 mm height, 10.4 mm length, and 4.6 mm width - allow integration into densely packed electronic assemblies.
Common use cases include power management in industrial controls, automotive electronics, uninterruptible power supplies (UPS), and general purpose semiconductor switching applications. The through-hole TO-220 package supports traditional PCB layouts and makes heat sinking easier for thermal management.
Supports a maximum continuous drain current of 20 amperes. Operates at a maximum drain-source voltage of 600 volts. Utilizes enhancement mode N-channel architecture. Packaged in a 3-pin TO-220 form factor for through-hole mounting.
Maximum power dissipation rating of 35 watts. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 60 nC at Vgs of 25 V. Low maximum drain-source resistance of 165 mΩ. Maximum gate-source voltage rating ±25 V.
Forward voltage drop of 1.3 V for efficient conduction.
STMicroelectronics products are supported by comprehensive design resources and global technical support available through EnvMart. Explore the Electronics & Electricals > Discrete Semiconductors > MOSFET category for related components and accessories.
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Frequently Asked Questions
The maximum continuous drain current of this model is 20 amperes.
It operates at a maximum drain-source voltage of 600 volts.
The maximum power dissipation rating is 35 watts.
The typical gate charge is 60 nanoCoulombs at a gate-source voltage of 25 volts.
The maximum drain-source resistance is 165 milliohms, which helps minimize conduction losses.
It has an operating temperature range from -55°C to 150°C.
This model is packaged in a standard 3-pin TO-220 through-hole package.
The forward voltage drop is 1.3 volts.
It has a maximum gate-source voltage rating of ±25 volts.
The dimensions are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
This model utilizes enhancement mode N-channel architecture.
Common applications include power management in industrial controls, automotive electronics, and uninterruptible power supplies (UPS).
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