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STMicroelectronics FDmesh N-Channel FDmesh II Power MOSFET 10A 600V Enhancement Mode 3-Pin TO-220FP STF11NM60ND
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF11NM60ND |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | FDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.45Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed for enhancement mode operation ensuring efficient switching.
- Maximum power dissipation of 90 W for reliable high load applications.
- Gate source voltage rating of -25 V to +25 V provides robust gate protection.
- Small form factor with dimensions 10.4 mm length, 16.4 mm height, and 4.6 mm width.
- Typical gate charge of 30 nC enabling fast switching performance.
- Operating temperature range from -55°C to 150°C suitable for harsh industrial environments.
- Forward voltage of 1.3 V typical for low conduction losses.
- Through-hole mounting allows for easy integration into power electronics designs.
Product Description
STMicroelectronics STF11NM60ND is a high-performance FDmesh II N-Channel Power MOSFET engineered to deliver continuous drain current of 10 A at a maximum drain source voltage of 600 V in a compact 3-pin TO-220FP package. It operates in enhancement mode, making it suitable for power switching applications requiring efficient control and reliability.
This device supports through-hole mounting which simplifies assembly and mechanical stability in discrete semiconductor circuits. With a maximum power dissipation of 90 W, the transistor can handle substantial thermal loads in industrial, automotive, and power management contexts.
The gate source voltage is rated from -25 V to +25 V, providing excellent gate protection and ensuring stable operation under varying control voltages. Its forward voltage of 1.3 V contributes to low conduction losses, enhancing overall energy efficiency.
STF11NM60ND features minimal typical gate charge of 30 nC at the gate source voltage, supporting faster switching speeds that reduce switching losses. The device's wide operating temperature range, spanning from -55°C to 150°C, ensures robust performance across a variety of harsh environmental conditions typically encountered in industrial and automotive electronics.
The footprint dimensions are 10.4 mm length, 16.4 mm height, and 4.6 mm width, offering a compact solution for power semiconductor needs. This MOSFET is ideal for applications including industrial power converters, HVAC systems, renewable energy inverters, and automotive power controls.
Designed for enhancement mode operation ensuring efficient switching. Maximum power dissipation of 90 W for reliable high load applications. Gate source voltage rating of -25 V to +25 V provides robust gate protection. Compact TO-220FP package with 3-pin layout for easy integration.
Wide operating temperature range supports industrial and automotive use. Low typical gate charge enables high-speed switching performance. Suitable for industrial, automotive, HVAC, manufacturing, and power electronics. Explore STMicroelectronics and similar semiconductor products at EnvMart for your power electronics development needs.
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Frequently Asked Questions
The maximum continuous drain current for the STF11NM60ND is 10 A.
It can handle a maximum drain source voltage of 600 V.
The maximum power dissipation for this model is 90 W.
The dimensions of the TO-220FP package are 10.4 mm in length, 16.4 mm in height, and 4.6 mm in width.
The typical gate charge is 30 nC at the gate source voltage.
The operating temperature range is from -55°C to 150°C.
The gate source voltage rating is from -25 V to +25 V.
This model supports through-hole mounting, which simplifies assembly.
The typical forward voltage is 1.3 V, contributing to low conduction losses.
This model belongs to the FDmesh series.
The maximum drain source resistance is 0.45 Ω.
It is suitable for applications including industrial power converters, HVAC systems, renewable energy inverters, and automotive power controls.
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