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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 8 A 900 V Enhancement 3-Pin TO-220FP STF9NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF9NK90Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 1.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- The MDmesh SuperMESH technology offers efficient power management and reduced conduction losses.
- Supports a maximum continuous drain current of 8 A, ideal for power switching circuits.
- Handles a maximum drain-source voltage of 900 V suitable for high-voltage applications.
- Equipped with a 3-pin TO-220FP through-hole mount package for easy PCB integration.
- Maximum power dissipation of 40 W supports robust thermal performance.
- Enhancement mode channel type enables precise control of switching.
- Typical gate charge of 72 nC ensures efficient gating with low switching losses.
- Operating temperature ranges from -55°C to 150°C, suitable for industrial environments.
Product Description
STMicroelectronics STF9NK90Z is a high-voltage MDmesh SuperMESH N-Channel MOSFET designed for enhanced power switching and energy efficiency. This enhancement mode transistor operates with a maximum drain current of 8 A and a drain-source voltage up to 900 V, making it suitable for industrial power electronics, motor control, and power supply applications.
The device is packaged in a durable 3-pin TO-220FP through-hole mount, enabling easy assembly on printed circuit boards. With a maximum power dissipation of 40 W and typical gate charge of 72 nC, the MOSFET ensures efficient switching and thermal performance. Operating temperature ranges from -55°C to 150°C provide robust reliability under varying conditions.
Its low maximum drain-source resistance of 1.3 Ω reduces conduction losses, enhancing overall system efficiency. The device supports a maximum gate-source voltage of ±30 V and features a forward voltage of 1.6 V. Dimensions are compact with a length of 10.4 mm, width of 4.6 mm, and height of 16.4 mm, allowing versatile use in electronic assemblies.
This MOSFET is ideally suited for industrial, manufacturing, and power management applications where high voltage and current handling capabilities are critical. The TO-220FP package supports through-hole mounting for reliable mechanical and electrical connections in industrial circuits.
MDmesh SuperMESH technology for improved conduction efficiency. Supports continuous drain current up to 8 A for demanding power loads. Operates at high voltage levels up to 900 V drain-source voltage. 3-Pin TO-220FP package suitable for through-hole mounting.
Maximum power dissipation of 40 W for thermal durability. Enhancement mode operation with precise gate control. Wide operating temperature range from -55°C to 150°C. Compact and robust design for industrial environments.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A, making it suitable for power switching applications.
It can handle a maximum drain-source voltage of 900 V, suitable for high-voltage applications.
This model is packaged in a 3-pin TO-220FP through-hole mount, allowing for easy integration on printed circuit boards.
The typical gate charge is 72 nC, which ensures efficient gating with low switching losses.
The maximum power dissipation is 40 W, supporting robust thermal performance.
It operates within a temperature range of -55°C to 150°C, making it suitable for industrial environments.
The forward voltage for this MOSFET is 1.6 V.
It supports a maximum gate-source voltage of ±30 V.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 16.4 mm in height.
This model features an N-channel type, which is suitable for enhancement mode operation.
The maximum drain-source resistance is 1.3 Ω, which helps reduce conduction losses.
It is ideally suited for industrial power electronics, motor control, and power supply applications.
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