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STMicroelectronics MDmesh N-Channel MOSFET 1.5 kV 2.5 A TO-247 3-Pin Enhancement STW3N150
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW3N150 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 1.5kV |
| Maximum Drain Source Resistance Rds | 9Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 29.3nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Supports maximum continuous drain current of 2.5 amps.
- Enhancement channel mode ensures precise control.
- TO-247 package type with through-hole mount for easy assembly.
- Maximum power dissipation rated at 140 watts.
- Wide operating temperature range from -55°C to 150°C.
- Typical gate charge of 29.3 nanocoulombs at gate voltage.
- Forward voltage drop of 1.6 volts for efficient conduction.
- Maximum drain-source resistance of 9 ohms ensuring low losses.
Product Description
STMicroelectronics STW3N150 is an N-Channel MDmesh™ MOSFET designed for high-voltage and high-current applications. It delivers a maximum continuous drain current of 2.5 A and supports drain-source voltage up to 1.5 kV, making it suitable for power management tasks in industrial, electronic components, and power control systems.
The device features an enhancement-type channel in a robust 3-pin TO-247 package with through-hole mounting, facilitating easy integration into circuit boards and machinery assemblies. This MOSFET has a maximum power dissipation of 140 W and operates reliably within a temperature range between -55°C and 150°C.
It exhibits a typical gate charge of 29.3 nC at gate voltage and maintains a low forward voltage of 1.6 V, which supports efficient switching with minimal conduction losses. The maximum drain-source resistance of 9 ohms further contributes to the device's performance in power-sensitive applications.
Compact physical dimensions (Height: 20.15 mm, Length: 15.75 mm, Width: 5.15 mm) allow this MOSFET to be accommodated in space-constrained environments.
STMicroelectronics STW3N150 MOSFET is well-suited for electronic, industrial, and power management use cases including inverters, converters, power supplies, and motor control systems.
Supports maximum continuous drain current of 2.5 amps. Enhancement channel mode ensures precise control. TO-247 package type with through-hole mount for easy assembly. Maximum power dissipation rated at 140 watts. Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 29.3 nanocoulombs at gate voltage. Forward voltage drop of 1.6 volts for efficient conduction. Maximum drain-source resistance of 9 ohms ensuring low losses. Device designed for industrial and power semiconductor applications.
Dimensions: 20.15 mm height, 15.75 mm length, 5.15 mm width. Explore more MOSFETs and semiconductor components from leading brands to enhance your industrial and electronic projects with EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.5 A.
It supports a maximum drain-source voltage of 1.5 kV.
The maximum power dissipation rated for this MOSFET is 140 W.
The typical gate charge at gate voltage is 29.3 nanocoulombs.
The forward voltage drop is 1.6 volts, which supports efficient conduction.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The maximum drain-source resistance is 9 ohms, ensuring low losses.
It operates reliably within a temperature range from -55°C to 150°C.
This MOSFET comes in a TO-247 package type with a through-hole mount.
It utilizes an N-channel type in enhancement mode for precise control.
This model is suitable for power management tasks in industrial, electronic components, and power control systems, including inverters and converters.
The maximum gate-source voltage is -30V to +30V.
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