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STMicroelectronics MDmesh M5 N-Channel MOSFET, 22 A, 650 V Enhancement Mode, 3-Pin TO-247 Package STW30N65M5

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STMicroelectronics MDmesh M5 N-Channel MOSFET, 22 A, 650 V Enhancement Mode, 3-Pin TO-247 Package STW30N65M5

Name: STMicroelectronics MDmesh M5 N-Channel MOSFET, 22 A, 650 V Enhancement Mode, 3-Pin TO-247 Package STW30N65M5
Brand: STMicroelectronics
SKU: 365004
Price: 6.3 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	20.15mm
Length	15.75mm
Model	STW30N65M5
Width	5.15mm
Mount Type	Through Hole
Series	MDmesh M5
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	22A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	139mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	140W
Typical Gate Charge Qg @ Vgs	64nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.5V

Key Features

This MOSFET features an enhancement mode channel type for reliable switching performance.
The package type is TO-247 with through-hole mount suitable for industrial assembly.
Maximum drain-source resistance is 139 milliohms ensuring low conduction losses.
It offers maximum power dissipation of 140 W and can operate between -55°C to 150°C.
The device is optimized for power factor correction and pulse width modulation applications.
Typical gate charge at specified gate voltage is 64 nC enabling efficient switching.
Its compact dimensions of 15.75 mm length, 20.15 mm height, and 5.15 mm width allow for space-saving designs.
The MOSFET is suitable for energy-conscious applications such as solar power converters and electronic lighting controls.

Product Description

STMicroelectronics STW30N65M5 is an N-channel MDmesh™ M5 series MOSFET designed for demanding high-power applications. It comes in a 3-pin TO-247 package and supports a maximum continuous drain current of 22 amperes and a maximum drain-source voltage of 650 volts. The enhancement mode channel type ensures efficient and reliable switching capability, making it ideal for power factor correction and PWM topologies.

This device features a low on-state resistance of 139 milliohms which reduces conduction losses per silicon area and supports high power dissipation of up to 140 watts. It operates reliably in a wide temperature range from -55°C to 150°C, catering to harsh industrial environments.

The typical gate charge is 64 nanocoulombs at the referenced gate-source voltage, enabling fast, efficient switching performance. The TO-247 package with through-hole mounting offers robustness and ease of integration in conventional printed circuit boards.

With dimensions of 15.75 mm in length, 20.15 mm in height, and 5.15 mm in width, the MOSFET suits compact power supply designs and energy-conscious electronics. It is engineered for applications including solar power inverters, consumer product power supplies, and electronic lighting controls.

This MOSFET supports up to 22 A drain current at 650 V maximum voltage. The TO-247 package facilitates through-hole mounting and durability. Low drain-source resistance minimizes power losses and improves efficiency. Wide operating temperature range covers industrial standards.

Optimized gate charge supports efficient switching for power management. Suitable for solar power converters, PWM controllers, and lighting electronics. Compact size enables use in space-constrained applications.

These features make the STW30N65M5 an excellent choice for industrial, laboratory, construction, HVAC, electronics manufacturing, and renewable energy applications. Explore more STMicroelectronics MOSFETs and discrete semiconductors in the EnvMart catalog for advanced power management solutions.