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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STP10NK70ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.6A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 850mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STP10NK70ZFP is an MDmesh™ SuperMESH™ N-Channel MOSFET designed for high voltage switching applications requiring robust performance and thermal management. With a maximum continuous drain current of 8.6 A and a voltage rating of 700 V, this device can handle demanding power electronics tasks effectively.
The enhancement-mode MOSFET features a low maximum drain-source resistance of 850 mΩ, which ensures higher efficiency and reduced conduction losses. Its typical gate charge of 64 nC at specified gate voltage allows faster switching speeds, beneficial for industrial, automotive, and consumer electronics circuits.
The device is housed in a TO-220 package with three pins, supporting through-hole mounting, making it suitable for easy assembly on printed circuit boards. It supports a maximum power dissipation of 35 W and can operate in extreme temperature conditions from -55°C to 150°C, ensuring reliability in harsh environments such as automotive electronics, industrial control systems, and power supply modules.
Physical dimensions of height 16.4 mm, length 10.4 mm, and width 4.6 mm aid in compact system design while providing adequate thermal dissipation. This MOSFET does not carry automotive industry standards or additional certifications but meets basic robustness and efficiency requirements for power device applications.
This MOSFET features a low drain-source resistance of 850 milliohms for efficient switching. The device supports enhancement mode operation and has a typical gate charge of 64 nC at Vgs. Maximum gate-source voltage rating is ±30 V, enabling robust gate control.
It operates reliably from -55°C up to 150°C ambient temperature, suitable for demanding environments. Compact TO-220 package with 3 pins facilitates through-hole mounting applications. Dimensions include height 16.4 mm, length 10.4 mm, and width 4.6 mm for easy PCB integration.
This MOSFET is ideal for use in electronic components, power and connectors, semiconductor devices, industrial automation, and automotive electronics. Browse and explore more discrete semiconductor components and MOSFETs at EnvMart for your power electronic design needs.
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