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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 700 V, 8.6 A, 35 W Power Dissipation, TO-220 Package STP10NK70ZFP

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 16.4mm
Length 10.4mm
Model STP10NK70ZFP
Width 4.6mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 8.6A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 850mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 35W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • This MOSFET features a low drain-source resistance of 850 milliohms for efficient switching.
  • The device supports enhancement mode operation and has a typical gate charge of 64 nC at Vgs.
  • Maximum gate-source voltage rating is ±30 V, enabling robust gate control.
  • It operates reliably from -55°C up to 150°C ambient temperature, suitable for demanding environments.
  • Compact TO-220 package with 3 pins facilitates through-hole mounting applications.

Product Description

STMicroelectronics STP10NK70ZFP is an MDmesh™ SuperMESH™ N-Channel MOSFET designed for high voltage switching applications requiring robust performance and thermal management. With a maximum continuous drain current of 8.6 A and a voltage rating of 700 V, this device can handle demanding power electronics tasks effectively.

The enhancement-mode MOSFET features a low maximum drain-source resistance of 850 mΩ, which ensures higher efficiency and reduced conduction losses. Its typical gate charge of 64 nC at specified gate voltage allows faster switching speeds, beneficial for industrial, automotive, and consumer electronics circuits.

The device is housed in a TO-220 package with three pins, supporting through-hole mounting, making it suitable for easy assembly on printed circuit boards. It supports a maximum power dissipation of 35 W and can operate in extreme temperature conditions from -55°C to 150°C, ensuring reliability in harsh environments such as automotive electronics, industrial control systems, and power supply modules.

Physical dimensions of height 16.4 mm, length 10.4 mm, and width 4.6 mm aid in compact system design while providing adequate thermal dissipation. This MOSFET does not carry automotive industry standards or additional certifications but meets basic robustness and efficiency requirements for power device applications.

This MOSFET features a low drain-source resistance of 850 milliohms for efficient switching. The device supports enhancement mode operation and has a typical gate charge of 64 nC at Vgs. Maximum gate-source voltage rating is ±30 V, enabling robust gate control.

It operates reliably from -55°C up to 150°C ambient temperature, suitable for demanding environments. Compact TO-220 package with 3 pins facilitates through-hole mounting applications. Dimensions include height 16.4 mm, length 10.4 mm, and width 4.6 mm for easy PCB integration.

This MOSFET is ideal for use in electronic components, power and connectors, semiconductor devices, industrial automation, and automotive electronics. Browse and explore more discrete semiconductor components and MOSFETs at EnvMart for your power electronic design needs.

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 700 V, 8.6 A, 35 W Power Dissipation, TO-220 Package STP10NK70ZFP
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Frequently Asked Questions

The maximum continuous drain current for this model is 8.6 A.

It has a maximum drain-source voltage rating of 700 V.

The maximum power dissipation for this unit is 35 W.

The typical gate charge at specified gate voltage is 64 nC.

The dimensions are height 16.4 mm, length 10.4 mm, and width 4.6 mm.

The maximum gate-source voltage rating is ±30 V.

It operates reliably from -55°C to 150°C ambient temperature.

The maximum drain-source resistance is 850 mΩ.

The TO-220 package has 3 pins.

This model supports through-hole mounting.

It operates in enhancement mode.

This MOSFET belongs to the MDmesh and SuperMESH series.

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