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STMicroelectronics MDmesh N-Channel MOSFET 10A 600V Enhancement 3-Pin TO-220 STP10NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP10NM60N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
| Transistor,MOSFET,N-channel,isBrand | Toshiba |
Key Features
- This enhancement mode MDmesh MOSFET provides reliable power dissipation up to 70 watts.
- The device features a maximum drain-source resistance of 550 milliohms for efficient switching.
- Its typical gate charge is 19 nanocoulombs at Vgs, enabling fast switching performance.
- Designed for through-hole mounting with a 3-pin configuration for easy integration.
- Operates within a wide temperature range from -55°C to 150°C for robust industrial use.
- Maximum gate-source voltage rating of -25 to +25 volts ensures device protection.
- Ideal for power management in industrial, automotive, and consumer electronics applications.
Product Description
STMicroelectronics STP10NM60N is a high-performance MDmesh N-Channel MOSFET designed for robust power management tasks. Featuring a maximum continuous drain current of 10A and a maximum drain-source voltage of 600V, this device operates in enhancement mode within a compact TO-220 package with through-hole mounting.
The STP10NM60N offers excellent efficiency thanks to its low 550 milliohm drain-source resistance and a typical gate charge of 19nC at Vgs, enabling rapid switching suitable for industrial, automotive, and electronic power conversion applications. It supports power dissipation up to 70W and withstands harsh operating temperatures ranging from -55°C to 150°C.
Measuring 15.75mm in height, 10.4mm in length, and 4.6mm in width, this 3-pin MOSFET is engineered for reliable use in various discrete semiconductor roles, including power supply circuits and motor controllers.
This enhancement mode MOSFET provides efficient power dissipation up to 70 watts. Maximum drain-source resistance of 550 milliohms reduces conduction losses. Fast switching enabled by a gate charge of 19 nanocoulombs. Wide operating temperature range from -55°C to 150°C ensures durability.
Standard TO-220 package with through-hole mounting for easy PCB integration. Maximum gate-source voltage rating of ±25 volts protects the device. Compact physical dimensions optimize space in electronic assemblies. Applicable in industrial, automotive, and consumer electronic circuits requiring efficient switching.
This STMicroelectronics MOSFET is a trusted choice for powering efficient, high-voltage electronic designs. For more power semiconductor options, explore our Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STP10NM60N is 10A.
This model has a maximum drain-source voltage rating of 600V.
The typical gate charge at Vgs for this MOSFET is 19 nanocoulombs.
It can handle power dissipation up to 70 watts.
The dimensions are 15.75mm in height, 10.4mm in length, and 4.6mm in width.
The maximum drain-source resistance is 550 milliohms, which helps in reducing conduction losses.
It operates within a temperature range from -55°C to 150°C.
This unit supports through-hole mounting with a 3-pin configuration.
The maximum gate-source voltage rating is -25 to +25 volts.
It is suitable for power management in industrial, automotive, and consumer electronics applications.
This MOSFET belongs to the MDmesh series.
The channel type is N-channel, designed for enhancement mode operation.
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