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STMicroelectronics MDmesh N-Channel MOSFET 11 A 800 V Enhancement 3-Pin TO-247 STW11NM80
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW11NM80 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 43.6nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 860mV |
Key Features
- Features enhancement mode operation for efficient switching.
- Has a maximum gate-source voltage of -30 V to +30 V.
- Offers low typical forward voltage of 860 mV for high performance.
- Designed to dissipate up to 150 W power safely.
- Operates reliably between -65°C and 150°C temperature range.
- Through hole mount type ensures secure PCB installation.
- Maximum drain-source resistance of 400 milliohms.
- Typical gate charge of 43.6 nC at specified gate voltage.
Product Description
STMicroelectronics STW11NM80 MDmesh N-Channel MOSFET is a high voltage transistor designed for switching and power management applications featuring an 11 amp continuous drain current and a maximum drain-source voltage of 800 volts. The device is housed in a durable 3-pin TO-247 package suitable for through-hole mounting on printed circuit boards.
This MOSFET operates in enhancement mode, providing efficient switching performance with a typical forward voltage of 860 millivolts and a low Rds(on) of 400 milliohms, ensuring minimal power loss and heat generation. It handles up to 150 watts of power dissipation, suitable for demanding electronic circuits.
The device supports a gate-source voltage ranging from -30 to +30 volts, allowing robust control and safe operation across different electronic systems. It functions effectively within a wide temperature range from -65°C to a maximum of 150°C, making it suitable for diverse industrial environments.
Physically compact, the MOSFET measures 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height, facilitating integration into space-constrained electronic assemblies. The TO-247 package is ideal for reliable mechanical and thermal performance in various power electronics applications.
Common usage of the STW11NM80 includes industrial power control, motor drives, power supplies, automotive electronics, and other applications requiring solid state switching. Its robust specs make it a reliable choice for improved production efficiency and durability.
Features enhancement mode operation for efficient switching. Has a maximum gate-source voltage of -30 V to +30 V. Offers low typical forward voltage of 860 mV for high performance. Designed to dissipate up to 150 W power safely.
Operates reliably between -65°C and 150°C temperature range. Compact dimensions: length 15.75 mm, width 5.15 mm, height 20.15 mm. Through hole mount type ensures secure PCB installation. Maximum drain-source resistance of 400 milliohms.
Typical gate charge of 43.6 nC at specified gate voltage. Ideal for power electronics and switching applications in industrial and commercial use. Explore other STMicroelectronics semiconductor devices and MOSFET options on EnvMart to find compatible components for your projects.
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Frequently Asked Questions
The maximum continuous drain current of the STW11NM80 MOSFET is 11 A.
This model has a maximum drain-source voltage of 800 V.
It is designed to dissipate up to 150 W of power safely.
The typical forward voltage of the STW11NM80 is 860 mV.
This MOSFET measures 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height.
The maximum gate-source voltage for the STW11NM80 is -30 V to +30 V.
The maximum drain-source resistance of the STW11NM80 is 400 milliohms.
It operates reliably between -65°C and 150°C.
This model uses a through hole mount type for secure PCB installation.
The typical gate charge at specified gate voltage is 43.6 nC.
Common applications include industrial power control, motor drives, power supplies, and automotive electronics.
This MOSFET belongs to the MDmesh series.
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